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RJP63K2DPK-M0 IGBT (IC) Datasheet. Cross Reference Search. RJP63K2DPK-M0 Equivalent

Type Designator: RJP63K2DPK-M0

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 630V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 35A

Maximum Junction Temperature (Tj), °C:

Rise Time, nS: 200

Maximum Collector Capacity (Cc), pF:

Package: TO3PSG

RJP63K2DPK-M0 Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJP63K2DPK-M0 PDF doc:

1.1. r07ds0468ej_rjp63k2dpp.pdf Size:145K _renesas

RJP63K2DPK-M0
RJP63K2DPK-M0

Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ ? High speed switching: tr = 60 ns typ, tf = 200 ns typ. ? Low leak current: ICES = 1 ?A max ? Isolated package TO-220FL

1.2. r07ds0469ej_rjp63k2dpk.pdf Size:155K _renesas

RJP63K2DPK-M0
RJP63K2DPK-M0

Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features ? Trench gate and thin wafer technology (G6H-II series) ? Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ ? High speed switching: tr = 60 ns typ, tf = 200 ns typ. ? Low leak current: ICES = 1 ?A max Outline RENESAS Package co

1.3. rjp63k2dpk-m0.pdf Size:124K _igbt

RJP63K2DPK-M0
RJP63K2DPK-M0

 Preliminary Datasheet RJP63K2DPK-M0 R07DS0469EJ0200 Silicon N Channel IGBT Rev.2.00 High speed power switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ  High speed switching: tr = 60 ns typ, tf = 200 ns typ.  Low leak current: ICES = 1 A max Outline RENES

1.4. rjp63k2dpp-m0.pdf Size:124K _igbt

RJP63K2DPK-M0
RJP63K2DPK-M0

 Preliminary Datasheet RJP63K2DPP-M0 R07DS0468EJ0200 Silicon N Channel IGBT Rev.2.00 High Speed Power Switching Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ  High speed switching: tr = 60 ns typ, tf = 200 ns typ.  Low leak current: ICES = 1 A max  Isolated pa

See also transistors datasheet: RJP6065DPM , RJP60D0DPE , RJP60D0DPP-M0 , RJP60F0DPE , RJP60F0DPM , RJP60F4DPM , RJP60F5DPM , RJP63F3DPP-M0 , IKW40T120 , RJP63K2DPP-M0 , RJP6085DPN-00 , RJP6085DPK , RJH60F0DPK , RJH60F4DPK , RJH60F6DPK , RJH60F7ADPK , RJH60F5DPK .

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