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GT60M302 IGBT (IC) Datasheet. Cross Reference Search. GT60M302 Equivalent

Type Designator: GT60M302

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 900V

Collector-Emitter saturation Voltage |Vcesat|, V: 3.3V

Maximum Gate-Emitter Voltage |Veg|, V: 15V

Maximum Collector Current |Ic|, A: 60A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 370

Maximum Collector Capacity (Cc), pF:

Package: TO264

GT60M302 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT60M302 PDF doc:

3.1. gt60m303.pdf Size:420K _toshiba

GT60M302
GT60M302

GT60M303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT60M303 HIGH POWER SWITCHING APPLICATIONS Unit: mm Fourth generation IGBT FRD included between emitter and collector Enhancement mode type High speed IGBT : tf = 0.25?s (TYP.) FRD : trr = 0.7?s (TYP.) Low saturation voltage : VCE (sat) = 2.1V (TYP.) ABSOLUTE MAXIMUM RATINGS (Ta = 25C) CHAR

See also transistors datasheet: GT5G102LB , GT5G103 , GT5G103LB , GT60J101 , GT60M101 , GT60M102 , GT60M103 , GT60M301 , IRG4PF50W , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , GT8G103 , GT8G103LB , GT8G121 .

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IGBT: IXXH60N65C4 | IXXH60N65B4H1 | IXXH60N65B4 | IXXH40N65B4H1 | IXXH40N65B4 | IXXH30N65B4 | IXXH30N60C3 | IXXH30N60B3 | IXXH150N60C3 | IXXH110N65C4 |

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