All IGBT Datasheet

 

GT8G103 IGBT (IC) Datasheet. Cross Reference Search. GT8G103 Equivalent

Type Designator: GT8G103

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 20W

Maximum collector-emitter voltage |Uce|, V: 400V

Collector-emitter saturation voltage |Ucesat|, V: 8V

Maximum gate-emitter voltage |Ueg|, V: 4.5V

Maximum collector current |Ic|, A: 150A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 2000

Maximum collector capacity (Cc), pF:

Package: DP

GT8G103 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT8G103 PDF doc:

5.1. gt8g151_100812.pdf Size:246K _toshiba

GT8G103
GT8G103

GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm Unit: mm Enhancement-mode TSON-8 TSON-8 Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current: IC = 150 A (max) 0.650.05 0.650.05 8 7 6 5 8 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25C) Char

See also transistors datasheet: GT60M103 , GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , GT40T301 , GT8G103LB , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , GT8N101 , GT8Q101 , GT8Q102 .

Search Terms:

 GT8G103 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


GT8G103
  GT8G103
  GT8G103
  GT8G103
 
GT8G103
  GT8G103
  GT8G103
  GT8G103
 

social 

LIST

Last Update

IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

Enter a full or partial SMD code with a minimum of 2 letters or numbers