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GT8G103LB IGBT (IC) Datasheet. Cross Reference Search. GT8G103LB Equivalent

Type Designator: GT8G103LB

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 20W

Maximum collector-emitter voltage |Uce|, V: 400V

Collector-emitter saturation voltage |Ucesat|, V: 8V

Maximum gate-emitter voltage |Ueg|, V: 4.5V

Maximum collector current |Ic|, A: 150A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 2000

Maximum collector capacity (Cc), pF:

Package: DP(LB)

GT8G103LB Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT8G103LB PDF doc:

5.1. gt8g151_100812.pdf Size:246K _toshiba

GT8G103LB
GT8G103LB

GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm Unit: mm Enhancement-mode TSON-8 TSON-8 Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current: IC = 150 A (max) 0.650.05 0.650.05 8 7 6 5 8 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25C) Char

See also transistors datasheet: GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , GT8G103 , GT30J322 , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , GT8N101 , GT8Q101 , GT8Q102 , HGT1S10N120BNS .

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