All IGBT. GT8G103LB Datasheet

 

GT8G103LB IGBT. Datasheet pdf. Equivalent

Type Designator: GT8G103LB

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 20W

Maximum Collector-Emitter Voltage |Vce|, V: 400V

Collector-Emitter saturation Voltage |Vcesat|, V: 8V

Maximum Gate-Emitter Voltage |Veg|, V: 4.5V

Maximum Collector Current |Ic|, A: 150A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 2000

Package: DP(LB)

GT8G103LB Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT8G103LB PDF doc:

5.1. gt8g151_100812.pdf Size:246K _toshiba

GT8G103LB
GT8G103LB

GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm Unit: mm Enhancement-mode TSON-8 TSON-8 Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current: IC = 150 A (max) 0.650.05 0.650.05 8 7 6 5 8 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25C) Char

Datasheet: GT60M301 , GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , GT8G103 , GT30J322 , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , GT8N101 , GT8Q101 , GT8Q102 , HGT1S10N120BNS .

 


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