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GT8G121 IGBT (IC) Datasheet. Cross Reference Search. GT8G121 Equivalent

Type Designator: GT8G121

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 20W

Maximum collector-emitter voltage |Uce|, V: 400V

Collector-emitter saturation voltage |Ucesat|, V: 7V

Maximum gate-emitter voltage |Ueg|, V: 4.5V

Maximum collector current |Ic|, A: 150A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 2000

Maximum collector capacity (Cc), pF:

Package: DP

GT8G121 Transistor Equivalent Substitute - IGBT Cross-Reference Search

GT8G121 PDF doc:

5.1. gt8g151_100812.pdf Size:246K _toshiba

GT8G121
GT8G121

GT8G151 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G151 Strobe Flash Applications Unit: mm Unit: mm Enhancement-mode TSON-8 TSON-8 Low gate drive voltage: VGE = 2.5 V (min.) (@IC = 150 A) Peak collector current: IC = 150 A (max) 0.650.05 0.650.05 8 7 6 5 8 7 6 5 Compact and Thin (TSON-8) package Absolute Maximum Ratings (Ta = 25C) Char

See also transistors datasheet: GT60M302 , GT60M303 , GT75G101 , GT80J101 , GT8G101 , GT8G102 , GT8G103 , GT8G103LB , IXGH40N60B2D1 , GT8G121LB , GT8J101 , GT8J102 , GT8N101 , GT8Q101 , GT8Q102 , HGT1S10N120BNS , HGT1S11N120CNS .

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IGBT: IRGP6660D | IRGP4660D | IRGP4063D1 | NGTB40N120IHLWG | NGTB40N120IHL | NGTB30N120IHLWG | NGTB30N120IHL | STGWA25M120DF3 | STGW25M120DF3 | IRGP4760D |

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