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GT8Q102 IGBT (IC) Datasheet. Cross Reference Search. GT8Q102 Equivalent

Type Designator: GT8Q102

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 50W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 4V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 8A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 500

Maximum collector capacity (Cc), pF:

Package: DPAK

GT8Q102 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: GT8G103 , GT8G103LB , GT8G121 , GT8G121LB , GT8J101 , GT8J102 , GT8N101 , GT8Q101 , FII50-12E , HGT1S10N120BNS , HGT1S11N120CNS , HGT1S12N60A4DS , HGT1S12N60A4S , HGT1S12N60B3 , HGT1S12N60B3D , HGT1S12N60B3DS , HGT1S12N60B3S .

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 GT8Q102 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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