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FGW85N60RB(85G60RB) IGBT (IC) Datasheet. Cross Reference Search. FGW85N60RB(85G60RB) Equivalent

Type Designator: FGW85N60RB(85G60RB)

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 600

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.45

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 85

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 85

Maximum Collector Capacity (Cc), pF: 1150

Package: TO247

FGW85N60RB(85G60RB) Transistor Equivalent Substitute - IGBT Cross-Reference Search

FGW85N60RB(85G60RB) PDF doc:

1.1. fgw85n60rb.pdf Size:532K _fuji

FGW85N60RB(85G60RB)
FGW85N60RB(85G60RB)

http://www.fujielectric.com/products/semiconductor/ FGW85N60RB Discrete IGBT Reverse Blocking IGBT 600V / 85A Features Reverse blocking characteristic for 1 chip by Fuji's original technology. High efficiency by applying to T-type 3 level inverter circuit. Applications Uninterruptible power supply Power conditioner Battery system Maximum Ratings and Characteristics Equivalent circu

See also transistors datasheet: FGW35N60HC(35G60HC) , FGW35N60HD(35G60HD) , FGW50N60H(50G60H) , FGW50N60HC(50G60HC) , FGW50N60HD(50G60HD) , FGW50N60VD(50G60VD) , FGW75N60H(75G60H) , FGW75N60HD(75G60HD) , IXGR48N60C3D1 , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF .

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