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1MBH60-100 IGBT (IC) Datasheet. Cross Reference Search. 1MBH60-100 Equivalent

Type Designator: 1MBH60-100

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 260

Maximum Collector-Emitter Voltage |Vce|, V: 1000

Collector-Emitter saturation Voltage |Vcesat|, V: 3.2

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 60

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO264

1MBH60-100 Transistor Equivalent Substitute - IGBT Cross-Reference Search

1MBH60-100 PDF doc:

1.1. 1mbh60-100.pdf Size:125K _no

1MBH60-100
1MBH60-100

 For more information, contact: Collmer Semiconductor, Inc. P.O. Box 702708 Dallas, TX 75370 972-233-1589 972-233-0481 Fax http://www.collmer.com

1.2. 1mbh60-100.pdf Size:30K _igbt_a

1MBH60-100
1MBH60-100



See also transistors datasheet: FGW35N60HD(35G60HD) , FGW50N60H(50G60H) , FGW50N60HC(50G60HC) , FGW50N60HD(50G60HD) , FGW50N60VD(50G60VD) , FGW75N60H(75G60H) , FGW75N60HD(75G60HD) , FGW85N60RB(85G60RB) , HGTG20N60A4 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF .

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