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SSIG15N135H IGBT (IC) Datasheet. Cross Reference Search. SSIG15N135H Equivalent

Type Designator: SSIG15N135H

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 260

Maximum Collector-Emitter Voltage |Vce|, V: 1350

Collector-Emitter saturation Voltage |Vcesat|, V: 1.9

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 30

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS:

Maximum Collector Capacity (Cc), pF: 40

Package: TO247

SSIG15N135H Transistor Equivalent Substitute - IGBT Cross-Reference Search

SSIG15N135H PDF doc:

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SSIG15N135H
SSIG15N135H

 SSIG15N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 15A @ TC = 100° C Schema t ic d iagr am TO-247 Features and Benefits:  Advanced Trench-FS Process Technology  Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@15A  Fast Switching  High Input Impedance  Pb- Free Product  Power Switch Circuit of Induction Co

See also transistors datasheet: FGW75N60H(75G60H) , FGW75N60HD(75G60HD) , FGW85N60RB(85G60RB) , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , FGPF4633 , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F .

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IGBT: IXXH60N65C4 | IXXH60N65B4H1 | IXXH60N65B4 | IXXH40N65B4H1 | IXXH40N65B4 | IXXH30N65B4 | IXXH30N60C3 | IXXH30N60B3 | IXXH150N60C3 | IXXH110N65C4 |

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