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SSIG20N135H IGBT (IC) Datasheet. Cross Reference Search. SSIG20N135H Equivalent

Type Designator: SSIG20N135H

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 310

Maximum collector-emitter voltage |Uce|, V: 1350

Collector-emitter saturation voltage |Ucesat|, V: 1.9

Maximum gate-emitter voltage |Ueg|, V: 30

Maximum collector current |Ic|, A: 40

Maximum junction temperature (Tj), °C: 175

Rise time, nS:

Maximum collector capacity (Cc), pF: 70

Package: TO247

SSIG20N135H Transistor Equivalent Substitute - IGBT Cross-Reference Search

SSIG20N135H PDF doc:

1.1. ssig20n135h.pdf Size:614K _silikron

SSIG20N135H
SSIG20N135H

 SSIG20N135H Main Product Characteristics: VCES 1350V VCE(sat) 1.9V (typ.) ID 20A @ TC = 100° C Schema t ic d iagr am TO-247 Features and Benefits:  Advanced Trench-FS Process Technology  Low Collector-Emitter Saturation Voltage, Typical Data is 1.9V@20A  Fast Switching  High Input Impedance  Pb- Free Product  Power Switch Circuit of Induction Co

See also transistors datasheet: FGW50N60VD(50G60VD) , FGW75N60H(75G60H) , FGW75N60HD(75G60HD) , FGW85N60RB(85G60RB) , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , CT60AM-18F , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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