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BT15T120ANF IGBT (IC) Datasheet. Cross Reference Search. BT15T120ANF Equivalent

Type Designator: BT15T120ANF

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 186

Maximum collector-emitter voltage |Uce|, V: 1200

Collector-emitter saturation voltage |Ucesat|, V: 2.5

Maximum gate-emitter voltage |Ueg|, V: 20

Maximum collector current |Ic|, A: 30

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 16

Maximum collector capacity (Cc), pF: 52

Package: TO3PN

BT15T120ANF Transistor Equivalent Substitute - IGBT Cross-Reference Search

BT15T120ANF PDF doc:

1.1. bt15t120anf.pdf Size:557K _igbt_a

BT15T120ANF
BT15T120ANF

Silicon FS Planar IGBT R ○ BT15T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features: Trench FS Technology, Positive temperature coe

1.2. bt15t120anf.pdf Size:557K _crhj

BT15T120ANF
BT15T120ANF

Silicon FS Planar IGBT R ○ BT15T120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 15 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.95 V Features: Trench FS Technology, Positive temperature coe

See also transistors datasheet: 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , G20N60B3D , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM .

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IGBT: IRGP6660D | IRGP4660D | IRGP4063D1 | NGTB40N120IHLWG | NGTB40N120IHL | NGTB30N120IHLWG | NGTB30N120IHL | STGWA25M120DF3 | STGW25M120DF3 | IRGP4760D |

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