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BT15N120ANF IGBT (IC) Datasheet. Cross Reference Search. BT15N120ANF Equivalent

Type Designator: BT15N120ANF

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 186

Maximum collector-emitter voltage |Uce|, V: 1200

Collector-emitter saturation voltage |Ucesat|, V: 2.7

Maximum gate-emitter voltage |Ueg|, V: 20

Maximum collector current |Ic|, A: 30

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 38.4

Maximum collector capacity (Cc), pF: 67

Package: TO3PN

BT15N120ANF Transistor Equivalent Substitute - IGBT Cross-Reference Search

BT15N120ANF PDF doc:

1.1. bt15n120anf.pdf Size:254K _crhj

BT15N120ANF
BT15N120ANF

Silicon FS Planar IGBT R ○ BT15N120ANF General Description: VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot (TC=25℃) 186 W and switching performances, high avalanche ruggedness. VCE(SAT) 2.2 V Features: Trench FS Technology, Positive temperature coef

5.1. bt15n60a9f.pdf Size:102K _crhj

BT15N120ANF
BT15N120ANF

Silicon FS Planar IGBT R ○ BT15N60A9F General Description: VCES 600 V Using HUAJING's proprietary Planar design and advanced FS IC 15 A technology, the 600V FSIGBT offers superior conduction and switching Ptot TC=25℃) 25 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 2.1 V Features: FS Planar Technology, Positive temperature coeff

See also transistors datasheet: FGW50N60VD(50G60VD) , FGW75N60H(75G60H) , FGW75N60HD(75G60HD) , FGW85N60RB(85G60RB) , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , CT60AM-18F , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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