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BT50N60ANF IGBT (IC) Datasheet. Cross Reference Search. BT50N60ANF Equivalent

Type Designator: BT50N60ANF

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 312

Maximum collector-emitter voltage |Uce|, V: 600

Collector-emitter saturation voltage |Ucesat|, V: 2.5

Maximum gate-emitter voltage |Ueg|, V: 20

Maximum collector current |Ic|, A: 50

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 49

Maximum collector capacity (Cc), pF: 175

Package: TO3PN

BT50N60ANF Transistor Equivalent Substitute - IGBT Cross-Reference Search

BT50N60ANF PDF doc:

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BT50N60ANF
BT50N60ANF

Silicon FS Planar IGBT R ○ BT50N60ANF General Description: VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features: FS Trench Technology, Positive temperature c

See also transistors datasheet: FGW50N60VD(50G60VD) , FGW75N60H(75G60H) , FGW75N60HD(75G60HD) , FGW85N60RB(85G60RB) , 1MBH60-100 , FGL40N120AN , BRG15N120D , BRG20N120D , CT60AM-18F , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , BT50N60ANF .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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