All IGBT. BT50N60ANF Datasheet

 

BT50N60ANF IGBT. Datasheet pdf. Equivalent

Type Designator: BT50N60ANF

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 312

Maximum Collector-Emitter Voltage |Vce|, V: 600

Collector-Emitter saturation Voltage |Vcesat|, V: 2.5

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 50

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 49

Maximum Collector Capacity (Cc), pF: 175

Package: TO3PN

BT50N60ANF Transistor Equivalent Substitute - IGBT Cross-Reference Search

BT50N60ANF PDF doc:

1.1. bt50n60anf.pdf Size:105K _igbt_a

BT50N60ANF
BT50N60ANF

Silicon FS Planar IGBT R ○ BT50N60ANF General Description: VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features: FS Trench Technology, Positive temperature c

1.2. bt50n60anf.pdf Size:106K _crhj

BT50N60ANF
BT50N60ANF

Silicon FS Planar IGBT R ○ BT50N60ANF General Description: VCES 600 V Using HUAJING's proprietary Trench design and advanced FS IC 50 A technology, the 600V FS IGBT offers superior conduction and switching Ptot TC=25℃) 312 W performances, high avalanche ruggedness and easy parallel operation. VCE(SAT) 1.7 V Features: FS Trench Technology, Positive temperature c

Datasheet: BRG25N120D , SSIG15N135H , SSIG20N135H , BT25T120ANF , BT15T120ANF , BT15N120ANF , BT40N60BNF , BT30N60ANF , IKW50N60H3 , BT15N60A9F , AP25G45EM , AP25G45GEM , AP28G45GEM , AP20G45EH , AP20G45EJ , TGPF30N40P , TGPF30N43P .

 


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IGBT: VS-GT75NP120N | VS-GT50TP60N | VS-GT50TP120N | VS-GT400TH60N | VS-GT400TH120U | VS-GT400TH120N | VS-GT300YH120N | VS-GT300FD060N | VS-GT175DA120U | VS-GT140DA60U |

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