HGT1S20N60C3RS IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: HGT1S20N60C3RS

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 164W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.2V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 40A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 34

Maximum collector capacity (Cc), pF:

Package: TO262AB

Equivalent transistors for HGT1S20N60C3RS

HGT1S20N60C3RS PDF document for downloads:

1.1. hgt1s20n60c3s_hgtp20n60c3_hgtg20n60c3.pdf Size:140K _fairchild_semi

HGTG20N60C3, HGTP20N60C3, HGT1S20N60C3S Data Sheet December 2001 45A, 600V, UFS Series N-Channel IGBT Features This family of MOS gated high voltage switching devices • 45A, 600V, TC = 25oC combining the best features of MOSFETs and bipolar • 600V Switching SOA Capability transistors. These devices have the high input impedance of • Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ = 150oC a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only • Short Circuit Rating moderately between 25oC and 150oC. • Low Conduction Loss The IGBT is ideal for many high voltage switching • Related Literature applications operating at moderate frequencies where low - TB334 “Guidelines for Soldering Surface Mount conduction losses are essential, such as: AC and DC motor Components to PC Boards” controls, power supplies and drivers for solenoids, relays and contactors. Packaging Formerly developme

5.1. hgt1s7n60c3ds_hgtp7n60c3d.pdf Size:557K _fairchild_semi

September 2005 HGTP7N60C3D, HGT1S7N60C3DS, HGT1S7N60C3D 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes General Description Features The HGTP7N60C3D, HGT1S7N60C3DS and 14A, 600V at TC = 25oC HGT1S7N60C3D are MOS gated high voltage switching devices combining the best features of MOSFETs and 600V Switching SOA Capability bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction Typical Fall Time...................140ns at TJ = 150oC loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The Short Circuit Rating IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type Low Conduction Loss TA49057. Hyperfast Anti-Parallel Diode The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, suc

5.2. hgtp7n60a4_hgtg7n60a4_hgt1s7n60a4.pdf Size:173K _fairchild_semi

HGT1S7N60A4S9A, HGTG7N60A4 HGTP7N60A4 Data Sheet September 2004 600V, SMPS Series N-Channel IGBT Features The HGT1S7N60A4S9A, HGTG7N60A4 and HGTP7N60A4 • >100kHz Operation at 390V, 7A are MOS gated high voltage switching devices combining • 200kHz Operation at 390V, 5A the best features of MOSFETs and bipolar transistors. These • 600V Switching SOA Capability devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The • Typical Fall Time . . . . . . . . . . . . . . . . . . . 75ns at TJ = 125oC much lower on-state voltage drop varies only moderately • Low Conduction Loss between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. Formerly Developmental Type TA49331. Ordering Information Symbol PART NUMBER PACKAGE BRAND C

5.3. hgtg11n120cn_hgtp11n120cn_hgt1s11n120cn.pdf Size:138K _fairchild_semi

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and • 43A, 1200V, TC = 25oC HGT1S11N120CNS are Non-Punch Through (NPT) IGBT • 1200V Switching SOA Capability designs. They are new members of the MOS gated high • Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device • Short Circuit Rating has the high input impedance of a MOSFET and the low on- • Low Conduction Loss state conduction loss of a bipolar transistor. • Avalanche Rated The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low • Thermal Impedance SPICE Model conduction losses are essential, such as: AC and DC motor Temperature Compensating SABER™ Model www.fairchildsemi.com controls, power supplies and drivers for solenoids, rela

5.4. hgtp12n60c3d_hgt1s12n60c3d.pdf Size:151K _fairchild_semi

HGTP12N60C3D, HGT1S12N60C3DS Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diodes • 24A, 600V at TC = 25oC This family of MOS gated high voltage switching devices • Typical Fall Time at TJ = 150oC . . . . . . . . . . . . . . . . 210ns combine the best features of MOSFETs and bipolar • Short Circuit Rating transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar • Low Conduction Loss transistor. The much lower on-state voltage drop varies only • Hyperfast Anti-Parallel Diode moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti-parallel Packaging with the IGBT is the development type TA49188. JEDEC TO-220AB The IGBT is ideal for many high voltage switching E C applications operating at moderate frequencies where low G conduction losses are essential. COLLECTOR (FLANGE) Formerly Developme

5.5. hgtp7n60b3d_hgt1s7n60b3d.pdf Size:497K _fairchild_semi

HGTP7N60B3D, HGT1S7N60B3DS Data Sheet December 2001 14A, 600V, UFS Series N-Channel IGBTs Features with Anti-Parallel Hyperfast Diode • 14A, 600V, TC = 25oC The HGTP7N60B3D and HGT1S7N60B3DS are MOS gated • 600V Switching SOA Capability high voltage switching devices combining the best features • Typical Fall Time. . . . . . . . . . . . . . . . 120ns at TJ = 150oC of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state • Short Circuit Rating conduction loss of a bipolar transistor. The much lower • Low Conduction Loss on-state voltage drop varies only moderately between 25oC and 150oC at rated current. The IGBT is developmental type • Hyperfast Anti-Parallel Diode TA49190. The diode used in anti-parallel with the IGBT is the Packaging RHRD660 (TA49057). JEDEC TO-220AB (ALTERNATE VERSION) The IGBT is ideal for many high voltage switching COLLECTOR applications operating at moderate frequencies where

5.6. hgtp12n60c3_hgt1s12n60c3.pdf Size:169K _fairchild_semi

HGTP12N60C3, HGT1S12N60C3S Data Sheet December 2001 24A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60C3 and HGT1S12N60C3S are MOS gated • 24A, 600V at TC = 25oC high voltage switching devices combining the best features • 600V Switching SOA Capability of MOSFETs and bipolar transistors. These devices have the • Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower • Short Circuit Rating on-state voltage drop varies only moderately between 25oC • Low Conduction Loss and 150oC. The IGBT is ideal for many high voltage switching Packaging applications operating at moderate frequencies where low JEDEC TO-220AB conduction losses are essential, such as: AC and DC motor EMITTER controls, power supplies and drivers for solenoids, relays COLLECTOR and contactors. GATE Formerly Developmental Type TA49123. COLLECTOR (FLANGE) Or

5.7. hgt1s10n120bn_hgth10n120bn_hgtp10n120bn.pdf Size:196K _fairchild_semi

HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet August 2002 35A, 1200V, NPT Series N-Channel IGBT Features The HGTG10N120BN, HGTP10N120BN and • 35A, 1200V, TC = 25oC HGT1S10N120BNS are Non-Punch Through (NPT) IGBT • 1200V Switching SOA Capability designs. They are new members of the MOS gated high • Typical Fall Time. . . . . . . . . . . . . . . . 140ns at TJ = 150oC voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device • Short Circuit Rating has the high input impedance of a MOSFET and the low on- • Low Conduction Loss state conduction loss of a bipolar transistor. • Avalanche Rated The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low • Thermal Impedance SPICE Model conduction losses are essential, such as: AC and DC motor Temperature Compensating SABER™ Model www.fairchildsemi.com controls, power supplies and drivers for solenoids, relays

5.8. hgtg12n60a4d_hgtp12n60a4d_hgt1s12n60a4d.pdf Size:173K _fairchild_semi

HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode • >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and • 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching • 600V Switching SOA Capability devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input • Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC impedance of a MOSFET and the low on-state conduction • Low Conduction Loss loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The • Temperature Compensating SABER™ Model IGBT used is the development type TA49335. The diode www.fairchildsermi.com used in anti-parallel is the development type TA49371. • Related Literatur

5.9. hgtg12n60a4_hgtp12n60a4_hgt1s12n60a4.pdf Size:207K _fairchild_semi

HGTP12N60A4, HGTG12N60A4, HGT1S12N60A4S9A Data Sheet August 2003 600V, SMPS Series N-Channel IGBTs Features The HGTP12N60A4, HGTG12N60A4 and • >100kHz Operation at 390V, 12A HGT1S12N60A4S9A are MOS gated high voltage switching • 200kHz Operation at 390V, 9A devices combining the best features of MOSFETs and • 600V Switching SOA Capability bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction • Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at TJ = 125oC loss of a bipolar transistor. The much lower on-state voltage • Low Conduction Loss drop varies only moderately between 25oC and 150oC. • Related Literature This IGBT is ideal for many high voltage switching - TB334 “Guidelines for Soldering Surface Mount applications operating at high frequencies where low Components to PC Boards conduction losses are essential. This device has been optimized for high frequency switch mode power supplies. F

See also transistors datasheet: HGT1S1N120BNDS , HGT1S1N120CNDS , HGT1S20N35G3VL , HGT1S20N35G3VLS , HGT1S20N35G3VLS9A , HGT1S20N60B3S , HGT1S20N60C3 , HGT1S20N60C3R , IRGBC40S , HGT1S20N60C3RS9A , HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CNS , HGT1S3N60A4DS , HGT1S3N60A4S .

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