All IGBT. APT35GA90S Datasheet

 

APT35GA90S IGBT. Datasheet pdf. Equivalent

Type Designator: APT35GA90S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 290

Maximum Collector-Emitter Voltage |Vce|, V: 900

Collector-Emitter saturation Voltage |Vcesat|, V: 2.2

Maximum Gate-Emitter Voltage |Veg|, V: 30

Maximum Collector Current |Ic|, A: 35

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 15

Maximum Collector Capacity (Cc), pF: 173

Package: TO268AB

APT35GA90S Transistor Equivalent Substitute - IGBT Cross-Reference Search

APT35GA90S PDF doc:

1.1. apt35ga90b.pdf Size:117K _igbt_a

APT35GA90S
APT35GA90S

APT35GA90B 900V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90B gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

1.2. apt35ga90s.pdf Size:207K _igbt_a

APT35GA90S
APT35GA90S

APT35GA90B APT35GA90S 900V High Speed PT IGBT APT35GA90S POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro

1.3. apt35ga90sd15.pdf Size:238K _igbt_a

APT35GA90S
APT35GA90S

APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT (B) POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - (S) C VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G E gate charge and a greatly reduced ratio of C

1.4. apt35ga90bd15.pdf Size:238K _igbt_a

APT35GA90S
APT35GA90S

APT35GA90BD15 900V High Speed PT IGBT POWER MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent

Datasheet: APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , IRG4BC30W-S , APT35GA90SD15 , IXYR50N120C3D1 , APT33GF120BRG , RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 .

 


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IGBT: IXYK120N120C3 | IXYK100N120C3 | IXYH50N120C3D1 | IXYH40N120C3D1 | IXYH40N120C3 | IXYH40N120B3D1 | IXYH40N120B3 | IXYR100N120C3 | IXYP30N120C3 | IXYP20N120C3 |

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