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APT80GP60B2G IGBT (IC) Datasheet. Cross Reference Search. APT80GP60B2G Equivalent

Type Designator: APT80GP60B2G

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 1041

Maximum collector-emitter voltage |Uce|, V: 600

Collector-emitter saturation voltage |Ucesat|, V: 2.1

Maximum gate-emitter voltage |Ueg|, V: 20

Maximum collector current |Ic|, A: 100

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 40

Maximum collector capacity (Cc), pF: 735

Package: TO247

APT80GP60B2G Transistor Equivalent Substitute - IGBT Cross-Reference Search

APT80GP60B2G PDF doc:

1.1. apt80gp60b2.pdf Size:91K _apt

APT80GP60B2G
APT80GP60B2G

APT80GP60B2 600V ® POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 45A G C E C • Low Gate Charge

1.2. apt80gp60jdf3.pdf Size:197K _apt

APT80GP60B2G
APT80GP60B2G

TYPICAL PERFORMANCE CURVES APT80GP60JDF3 APT80GP60JDF3 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" • Low Conduction Loss • 100 kHz ope

1.3. apt80gp60j.pdf Size:98K _apt

APT80GP60B2G
APT80GP60B2G

APT80GP60J 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" • Low Conduction Loss • 100 kHz operation @ 400V, 39A ISOTOP® C • Low Gate

1.4. apt80gp60jdq3.pdf Size:248K _igbt_a

APT80GP60B2G
APT80GP60B2G

TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 600V APT80GP60JDQ3 ® ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP® file # E145592 • Lo

1.5. apt80gp60b2g.pdf Size:92K _igbt_a

APT80GP60B2G
APT80GP60B2G

APT80GP60B2 600V ® POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. • Low Conduction Loss • 200 kHz operation @ 400V, 45A G C E C • Low Gate Charge

1.6. apt80gp60j.pdf Size:99K _igbt_a

APT80GP60B2G
APT80GP60B2G

APT80GP60J 600V ® POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" • Low Conduction Loss • 100 kHz operation @ 400V, 39A ISOTOP® C • Low Gate

See also transistors datasheet: APT60GF120JRDQ3 , APT100GN60LDQ4G , 1MBI300N-120 , IXYX140N90C3 , 1MBI200N-120 , IXYX120N120C3 , MPMD200B120RH , IXYX100N120C3 , IRGP4063D , APT75GP120B2G , APT100GN120B2G , MPMC200B120RH , F3L300R07PE4 , APT65GP60L2DQ2G , MPMD150B120RH , IXYT80N90C3 , APT102GA60B2 .

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