All IGBT. T0800EB45G Datasheet

 

T0800EB45G IGBT. Datasheet pdf. Equivalent

Type Designator: T0800EB45G

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 6400

Maximum Collector-Emitter Voltage |Vce|, V: 4500

Collector-Emitter saturation Voltage |Vcesat|, V: 2.75

Maximum Gate-Emitter Voltage |Veg|, V: 20

Maximum Collector Current |Ic|, A: 800

Maximum Junction Temperature (Tj), °C: 125

Rise Time, nS: 3300

T0800EB45G Transistor Equivalent Substitute - IGBT Cross-Reference Search

T0800EB45G PDF doc:

1.1. t0800eb45g.pdf Size:382K _igbt

T0800EB45G
T0800EB45G

Date:- 3 March, 2012 Data Sheet Issue: - 1 WESTCODE An IXYS Company Insulated Gate Bi-Polar Transistor Type T0800EB45G Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate – emitter voltage ±20 V MAXIMUM RATINGS UNITS LIMITS IC(DC) D

5.1. t0800tb45e.pdf Size:513K _igbt

T0800EB45G
T0800EB45G

Date:- 14 July, 2011 Data Sheet Issue:- P1 WESTCODE An IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T0800TB45E Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS UNITS LIMITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800 V VGES Peak gate – emitter voltage ±20 V MAXIMUM RATINGS UNITS

Datasheet: AP20GT60ASI-HF , AOTF5B60D , AP20GT60I , AP28G40GEM-HF , T0510VB45E , T0850VB25E , T0600TB45A , T1200TB25A , G40N60B3 , T0800TB45E , T0900EB45A , FF1400R12IP4 , T2250AB25E , T1200EB45E , T1600GB45G , T1800GB45A , T2400GB45E .

 


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IGBT: IXYK120N120C3 | IXYK100N120C3 | IXYH50N120C3D1 | IXYH40N120C3D1 | IXYH40N120C3 | IXYH40N120B3D1 | IXYH40N120B3 | IXYR100N120C3 | IXYP30N120C3 | IXYP20N120C3 |

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