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HGTD10N40F1S9A IGBT (IC) Datasheet. Cross Reference Search. HGTD10N40F1S9A Equivalent

Type Designator: HGTD10N40F1S9A

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 75W

Maximum collector-emitter voltage |Uce|, V: 400V

Collector-emitter saturation voltage |Ucesat|, V: 2.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 12A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 45

Maximum collector capacity (Cc), pF:

Package: TO252AA

HGTD10N40F1S9A Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTD10N40F1S9A PDF doc:

2.1. hgtd10n4.pdf Size:40K _harris_semi

HGTD10N40F1S9A
HGTD10N40F1S9A

HGTD10N40F1, HGTD10N40F1S, S E M I C O N D U C T O R HGTD10N50F1, HGTD10N50F1S 10A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTD10N40F1, HGTD10N50F1 10A, 400V and 500V JEDEC TO-251AA VCE(ON) 2.5V Max. EMITTER TFALL ?1.4s COLLECTOR GATE Low On-State Voltage Fast Switching Speeds COLLECTOR (FLANGE) High Input Impedance Applications HGTD10N40F1S, HG

5.1. hgtd1n120bns_hgtp1n120bn.pdf Size:92K _fairchild_semi

HGTD10N40F1S9A
HGTD10N40F1S9A

HGTD1N120BNS, HGTP1N120BN Data Sheet January 2001 5.3A, 1200V, NPT Series N-Channel IGBT Features The HGTD1N120BNS and HGTP1N120BN are Non-Punch 5.3A, 1200V, TC = 25oC Through (NPT) IGBT designs. They are new members of the 1200V Switching SOA Capability MOS gated high voltage switching IGBT family. IGBTs Typical EOFF . . . . . . . . . . . . . . . . . . 120J at TJ = 150oC combin

See also transistors datasheet: HGT1S7N60C3D , HGT1S7N60C3DS , HGT1S7N60C3DS9A , HGT1Y40N60A4 , HGT1Y40N60A4D , HGT5A40N60A4 , HGTD10N40F1 , HGTD10N40F1S , FGA25N120ANTD , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS , HGTD2N120BNS , HGTD2N120CNS , HGTD3N60A4S .

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