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RJH60A83RDPE IGBT (IC) Datasheet. Cross Reference Search. RJH60A83RDPE Equivalent

Type Designator: RJH60A83RDPE

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 52

Maximum collector-emitter voltage |Uce|, V: 600

Collector-emitter saturation voltage |Ucesat|, V: 2.1

Maximum gate-emitter voltage |Ueg|, V: 30

Maximum collector current |Ic|, A: 20

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 14

Maximum collector capacity (Cc), pF: 19

Package: TO263

RJH60A83RDPE Transistor Equivalent Substitute - IGBT Cross-Reference Search

RJH60A83RDPE PDF doc:

1.1. rjh60a83rdpe.pdf Size:110K _igbt

RJH60A83RDPE
RJH60A83RDPE

 Preliminary Datasheet RJH60A83RDPE R07DS0806EJ0200 600V - 10A - IGBT Rev.2.00 Application: Inverter Jul 12, 2012 Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 130 ns

1.2. rjh60a83rdpp-m0.pdf Size:119K _igbt

RJH60A83RDPE
RJH60A83RDPE

 Preliminary Datasheet RJH60A83RDPP-M0 R07DS0808EJ0200 600V - 10A - IGBT Rev.2.00 Application: Inverter Jul 12, 2012 Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 2.1 V typ. (at IC = 10 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 130

3.1. rjh60a85rdpp-m0.pdf Size:120K _igbt

RJH60A83RDPE
RJH60A83RDPE

 Preliminary Datasheet RJH60A85RDPP-M0 R07DS0811EJ0200 600V - 15A - IGBT Rev.2.00 Application: Inverter Jul 12, 2012 Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 160

3.2. rjh60a85rdpe.pdf Size:111K _igbt

RJH60A83RDPE
RJH60A83RDPE

 Preliminary Datasheet RJH60A85RDPE R07DS0809EJ0200 600V - 15A - IGBT Rev.2.00 Application: Inverter Jul 12, 2012 Features  Reverse conducting IGBT with monolithic diode  Short circuit withstand time (5 s typ.)  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 15 A, VGE = 15 V, Ta = 25°C)  Built-in fast recovery diode (trr = 160 ns

See also transistors datasheet: RJH60A85RDPP-M0 , RJH60V3BDPP-M0 , RJP5001APP-M0 , RJP5001APP-00 , RJQ6008DPM , KGF15N60FDA , RJQ6003DPM , RJQ6015DPM , CT60AM-20 , RJH60V1BDPE , STGFW20V60DF , IRGB4059DPBF , IRGB4607D , IRGR4607D , IRGS4607D , STGFW20H65FB , STGFW30H65FB .

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