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HGTD3N60A4S IGBT (IC) Datasheet. Cross Reference Search. HGTD3N60A4S Equivalent

Type Designator: HGTD3N60A4S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V:

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A:

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 0

Maximum Collector Capacity (Cc), pF:

Package: -

HGTD3N60A4S Transistor Equivalent Substitute - IGBT Cross-Reference Search

HGTD3N60A4S PDF doc:

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HGTD3N60A4S
HGTD3N60A4S

HGTD3N60C3, S E M I C O N D U C T O R HGTD3N60C3S June 1996 6A, 600V, UFS Series N-Channel IGBT Features Packaging JEDEC TO-251AA 6A, 600V at TC = +25oC 600V Switching SOA Capability EMITTER COLLECTOR Typical Fall Time - 130ns at TJ = +150oC GATE Short Circuit Rating Low Conduction Loss COLLECTOR (FLANGE) Description The HGTD3N60C3 and HGTD3N60C3S are MOS gated high vol

See also transistors datasheet: HGTD10N40F1S9A , HGTD10N50F1 , HGTD10N50F1S , HGTD10N50F1S9A , HGTD1N120BNS , HGTD1N120CNS , HGTD2N120BNS , HGTD2N120CNS , G30N60C3 , HGTD3N60B3 , HGTD3N60B3S , HGTD3N60C3 , HGTD3N60C3S , HGTD3N60C3S9A , HGTD6N40E1 , HGTD6N40E1S , HGTD6N50E1 .

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