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STGB20V60F IGBT (IC) Datasheet. Cross Reference Search. STGB20V60F Equivalent

Type Designator: STGB20V60F

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 167

Maximum collector-emitter voltage |Uce|, V: 600

Collector-emitter saturation voltage |Ucesat|, V: 2.15

Maximum gate-emitter voltage |Ueg|, V: 20

Maximum collector current |Ic|, A: 20

Maximum junction temperature (Tj), °C: 175

Rise time, nS: 10

Maximum collector capacity (Cc), pF: 110

Package: TO263

STGB20V60F Transistor Equivalent Substitute - IGBT Cross-Reference Search

STGB20V60F PDF doc:

1.1. stgb20v60f.pdf Size:1553K _igbt

STGB20V60F
STGB20V60F

STGB20V60F, STGP20V60F 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • Very high speed switching series TAB TAB • Tail-less switching off • Low saturation voltage: VCE(sat) = 1.8 V (typ.) @ IC = 20 A 3 3 • Tight parameters distribution 2 1 1 • Safe paralleling D2PAK TO-

1.2. stgb20v60df.pdf Size:2085K _igbt

STGB20V60F
STGB20V60F

STGB20V60DF, STGP20V60DF, STGW20V60DF, STGWT20V60DF 600 V, 20 A very high speed trench gate field-stop IGBT Datasheet - production data Features TAB TAB • Maximum junction temperature: TJ = 175 °C • Very high speed switching series 3 3 2 • Tail-less switching off 1 1 • Low saturation voltage: VCE(sat) = 1.8 V (typ.) TO-220 D²PAK @ IC = 20 A TAB • Tight paramete

4.1. stgb20nb37lz.pdf Size:382K _st

STGB20V60F
STGB20V60F

STGB20NB37LZ N-CHANNEL CLAMPED 20A - D?PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB20NB37LZ CLAMPED < 2.0 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP 3 LOW GATE CHARGE 1 HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE ADD SUFFIX T4 FOR ORDERING IN TAPE & D?PAK REEL DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Usin

4.2. stgb20nb32lz_stgb20nb32lz-1.pdf Size:501K _st

STGB20V60F
STGB20V60F

STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB20NB32LZ CLAMPED < 2.0 V 20 A STGB20NB32LZ-1 CLAMPED < 2.0 V 20 A POLYSILICON GATE VOLTAGE DRIVEN 3 LOW THRESHOLD VOLTAGE 3 1 2 LOW ON-VOLTAGE DROP 1 HIGH CURRENT CAPABILITY D2PAK I2PAK HIGH VOLTAGE CLAMPING FEATURE DESCRIPTION Using the latest high v

4.3. stgb20nb32lz(-1).pdf Size:462K _st

STGB20V60F
STGB20V60F

STGB20NB32LZ STGB20NB32LZ-1 N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB20NB32LZ CLAMPED < 2.0 V 20 A STGB20NB32LZ-1 CLAMPED < 2.0 V 20 A POLYSILICON GATE VOLTAGE DRIVEN 3 LOW THRESHOLD VOLTAGE 3 1 2 LOW ON-VOLTAGE DROP 1 HIGH CURRENT CAPABILITY D2PAK I2PAK HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING D?PAK (TO-263) PO

4.4. stgb20nb41lz.pdf Size:257K _st

STGB20V60F
STGB20V60F

STGB20NB41LZ N-CHANNEL CLAMPED 20A - D?PAK INTERNALLY CLAMPED PowerMESH IGBT TYPE VCES VCE(sat) IC STGB20NB41LZ CLAMPED < 2.0 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP 3 1 LOW GATE CHARGE HIGH CURRENT CAPABILITY D?PAK HIGH VOLTAGE CLAMPING FEATURE DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STM

4.5. stgb20nc60v_stgp20nc60v_stgw20nc60v.pdf Size:405K _st

STGB20V60F
STGB20V60F

STGB20NC60V - STGP20NC60V STGW20NC60V 30 A - 600 V - very fast IGBT Features High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) 3 High current capability 3 2 2 1 1 Applications TO-247 TO-220 3 1 High frequency inverters UPS, motor drivers D?PAK HF, SMPS and PFC in both hard switch and resonant topologies Description

4.6. stgb20nb37lz.pdf Size:284K _igbt

STGB20V60F
STGB20V60F

STGB20NB37LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB20NB37LZ CLAMPED < 2.0 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP 3 LOW GATE CHARGE 1 HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE ADD SUFFIX “T4” FOR ORDERING IN TAPE & D²PAK REEL DESCRIPTION INTERNAL SCHEMATIC DI

4.7. stgb20h60df.pdf Size:1853K _igbt

STGB20V60F
STGB20V60F

STGB20H60DF, STGF20H60DF, STGP20H60DF 600 V, 20 A high speed trench gate field-stop IGBT Datasheet - production data Features TAB • High speed switching • Tight parameters distribution 3 • Safe paralleling 3 2 2 1 1 • Low thermal resistance TO-220 TO-220FP • Short-circuit rated • Ultrafast soft recovery antiparallel diode TAB Applications 3 1 • Motor contr

4.8. stgb20nb41lz.pdf Size:263K _igbt

STGB20V60F
STGB20V60F

STGB20NB41LZ N-CHANNEL CLAMPED 20A - D²PAK INTERNALLY CLAMPED PowerMESH™ IGBT TYPE VCES VCE(sat) IC STGB20NB41LZ CLAMPED < 2.0 V 20 A POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP 3 1 LOW GATE CHARGE HIGH CURRENT CAPABILITY D²PAK HIGH VOLTAGE CLAMPING FEATURE DESCRIPTION Using the latest high voltage technology based on a patented strip layo

4.9. stgb20nc60v.pdf Size:400K _igbt

STGB20V60F
STGB20V60F

STGB20NC60V - STGP20NC60V STGW20NC60V 30 A - 600 V - very fast IGBT Features ■ High frequency operation up to 50 kHz ■ Lower CRES / CIES ratio (no cross-conduction susceptibility) 3 ■ High current capability 3 2 2 1 1 Applications TO-247 TO-220 3 1 ■ High frequency inverters ■ UPS, motor drivers D²PAK ■ HF, SMPS and PFC in both hard switch and resonant topologi

See also transistors datasheet: AUIRG4PC40S-E , KGF15N120KDA , IRG7PK35UD1 , NGTB30N60FLWG , NGTB30N60FWG , NGTG30N60FLWG , NGTG30N60FWG , STGB20V60DF , 20N60C3R , STGFW20V60F , STGP20V60DF , STGP20V60F , STGW20V60DF , STGW20V60F , STGWT20V60DF , STGWT20V60F , F3L50R06W1E3_B11 .

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