1MBH25D-120 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: 1MBH25D-120

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 310W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V: 3.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 38A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 1200

Maximum collector capacity (Cc), pF:

Package: TO3PL

Equivalent transistors for 1MBH25D-120

1MBH25D-120 PDF document for downloads:

PDF unavailable!

See also transistors datasheet: 1MBH08D-120 , 1MBH10D-060 , 1MBH10D-120 , 1MBH15-120 , 1MBH15D-060 , 1MBH15D-120 , 1MBH20D-060 , 1MBH25-120 , IRG4PC40U , 1MBH30D-060 , 1MBH50-060 , 1MBH50D-060 , 20N35GVL , 20N60C3DR , 20N60C3R , 27N60C3DR , 27N60C3R .

Keywords