HGTP10N40E1 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: HGTP10N40E1

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 60W

Maximum collector-emitter voltage |Uce|, V: 400V

Collector-emitter saturation voltage |Ucesat|, V: 4.5V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 10A

Maximum junction temperature (Tj), °C: 175

Rise time, nS: 50

Maximum collector capacity (Cc), pF:

Package: TO220

Equivalent transistors for HGTP10N40E1

HGTP10N40E1 PDF document for downloads:

1.1. hgtp10n40c1d_hgtp10n40e1d_hgtp10n50c1d_hgtp10n50e1d.pdf Size:47K _harris_semi

HGTP10N40C1D, HGTP10N40E1D, S E M I C O N D U C T O R HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 10A, 400V and 500V • VCE(ON): 2.5V Max. EMITTER COLLECTOR • TFALL: 1µs, 0.5µs GATE • Low On-State Voltage COLLECTOR • Fast Switching Speeds (FLANGE) • High Input Impedance • Anti-Parallel Diode Applications • Power Supplies Terminal Diagram • Motor Drives N-CHANNEL ENHANCEMENT MODE • Protective Circuits C Description The HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, and HGTP10N50E1D are n-channel enhancement-mode G insulated gate bipolar transistors (IGBTs) designed for high voltage, low on-dissipation applications such as switching reg- ulators and motor drivers. They feature a discrete anti-parallel E diode that shunts current around the IGBT in the reverse direction without introducing carriers into the depletion region. These types can be operated directly

1.2. hgtp10n40f.pdf Size:43K _harris_semi

HGTP10N40F1D, S E M I C O N D U C T O R HGTP10N50F1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package JEDEC TO-220AB • 10A, 400V and 500V • Latch Free Operation EMITTER • Typical Fall Time < 1.4µs COLLECTOR GATE • High Input Impedance • Low Conduction Loss COLLECTOR (FLANGE) • Anti-Parallel Diode • tRR < 60ns Description The IGBT is a MOS gated high voltage switching device combin- ing the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low Terminal Diagram on-state conduction loss of a bipolar transistor. The much lower N-CHANNEL ENHANCEMENT MODE on-state voltage drop varies only moderately between +25oC C and +150oC. The diode used in parallel with the IGBT is an ultrafast (tRR < 60ns) with soft recovery characteristic. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are G essen

2.1. hgtp10n4.pdf Size:49K _harris_semi

HGTP10N40C1, 40E1, 50C1, 50E1, S E M I C O N D U C T O R HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE(ON): 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs GATE COLLECTOR (FLANGE) • Low On-State Voltage • Fast Switching Speeds • High Input Impedance • No Anti-Parallel Diode Applications HGTP-TYPES JEDEC TO-220AB • Power Supplies EMITTER • Motor Drives COLLECTOR COLLECTOR GATE (FLANGE) • Protection Circuits Description The HGTH12N40C1, HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, HGTP10N50C1 and HGTP10N50E1 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as Terminal Diagram switching regulators and motor drivers. These types can be operated N-CHANNEL ENHANCEMENT MODE directly from low-power integrated circuits. C PACKAGING AVAILABI

See also transistors datasheet: HGTH12N50C1D , HGTH12N50E1 , HGTH12N50E1D , HGTM12N40C1 , HGTM12N40E1 , HGTP10N120BN , HGTP10N40C1 , HGTP10N40C1D , G7N60C3D , HGTP10N40E1D , HGTP10N40F1D , HGTP10N50C1 , HGTP10N50C1D , HGTP10N50E1 , HGTP10N50E1D , HGTP10N50F1D , HGTP11N120CN .

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