IGBT Datasheet


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1MBH50D-060
  1MBH50D-060
  1MBH50D-060
 
1MBH50D-060
  1MBH50D-060
  1MBH50D-060
 
1MBH50D-060
  1MBH50D-060
 
 
List
10N40C1D ..APT50GF120LR
APT50GF60AR ..FGPF4533
FGPF4536 ..GT5G101
GT5G102 ..HGTD7N60B3S
HGTD7N60C3 ..HGTP7N60A4D
HGTP7N60B3 ..IKW25T120
IKW30N100T ..IRG4PH30KD
IRG4PH40K ..IRGP4066D-E
IRGP4068D ..IXDN50N120AU1
IXDN55N120 ..IXGH15N120BD1
IXGH15N120C ..IXGH40N120C3
IXGH40N120C3D1 ..IXGN200N60B3
IXGN320N60A3 ..IXGR60N60B2
IXGR60N60B2D1 ..IXGX32N170AH1
IXGX32N170H1 ..IXSP24N60B
IXSQ10N60B2D1 ..MGS05N60D
MGS13002D ..MIXA80W1200TED
MIXA80W1200TED ..MWI80-12T6K
NGB15N41CLT4 ..RJP60D0DPM
RJP60D0DPP-M0 ..SGS6N60UFD
SGU15N40L ..SKM400GB124D
SKM40GD123D ..STGB10NC60HD
STGB10NC60K ..STGW25H120DF
STGW30N120KD ..VWI35-06P1
 
1MBH50D-060 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

1MBH50D-060 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: 1MBH50D-060

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 310W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 3V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 82A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 1200

Maximum collector capacity (Cc), pF:

Package: TO3PL

Equivalent transistors for 1MBH50D-060

1MBH50D-060 PDF doc:

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See also transistors datasheet: 1MBH15-120 , 1MBH15D-060 , 1MBH15D-120 , 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , IRG4PC40U , 20N35GVL , 20N60C3DR , 20N60C3R , 27N60C3DR , 27N60C3R , 2N6975 , 2N6976 , 2N6977 .

Keywords

 1MBH50D-060 Datasheet  1MBH50D-060 Datenblatt  1MBH50D-060 RoHS  1MBH50D-060 Distributor
 1MBH50D-060 Application Notes  1MBH50D-060 Component  1MBH50D-060 Circuit  1MBH50D-060 Schematic
 1MBH50D-060 Equivalent  1MBH50D-060 Cross Reference  1MBH50D-060 Data Sheet  1MBH50D-060 Fiche Technique

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