IGBT Datasheet



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1MBH50D-060
  1MBH50D-060
  1MBH50D-060
  1MBH50D-060
 
1MBH50D-060
  1MBH50D-060
  1MBH50D-060
  1MBH50D-060
 
 
List
10N40C1D ..APT15GP90K
APT15GT60BR ..FGA30N120FTD
FGA30N60LSD ..GT10J311
GT10J321 ..HGT1S12N60C3
HGT1S12N60C3D ..HGTG30N60A4
HGTG30N60A4D ..IGW30N100T
IGW30N60H3 ..IRG4BC20U
IRG4BC20UD ..IRG6B330UD
IRG6I320U ..IRGSL4062D
IRGSL4B60KD1 ..IXGA12N60CD1
IXGA14N120B ..IXGH24N50BU1
IXGH24N60B ..IXGH50N60C4D1
IXGH50N90B2 ..IXGP16N60C2
IXGP16N60C2D1 ..IXGT24N170
IXGT24N170A ..IXSA10N60B2D1
IXSA12N60AU1 ..IXXH100N60C3
IXXH30N60B3D1 ..MIEB101H1200EH
MIEB101W1200EH ..MSAHX75L60C
MSAHX75L60D ..RCM10N40A
RCP10N35 ..SGF80N60UF
SGF80N60UFD ..SKD75GAL123D
SKM100GAL123D ..SKW15N120
SKW15N60 ..STGD10NC60S
STGD10NC60SD ..STGWF30NC60S
STGWT38IH130D ..VWI35-06P1
 
1MBH50D-060 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

1MBH50D-060 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: 1MBH50D-060

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 310W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 3V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 82A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 1200

Maximum collector capacity (Cc), pF:

Package: TO3PL

Equivalent transistors for 1MBH50D-060 - Cross-Reference Search

1MBH50D-060 PDF doc:

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See also transistors datasheet: 1MBH15-120 , 1MBH15D-060 , 1MBH15D-120 , 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , IRG4PC40U , 20N35GVL , 20N60C3DR , 20N60C3R , 27N60C3DR , 27N60C3R , 2N6975 , 2N6976 , 2N6977 .

Keywords

 1MBH50D-060 Datasheet  1MBH50D-060 Datenblatt  1MBH50D-060 RoHS  1MBH50D-060 Distributor
 1MBH50D-060 Application Notes  1MBH50D-060 Component  1MBH50D-060 Circuit  1MBH50D-060 Schematic
 1MBH50D-060 Equivalent  1MBH50D-060 Cross Reference  1MBH50D-060 Data Sheet  1MBH50D-060 Fiche Technique

 

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