IGBT Datasheet


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1MBH50D-060
  1MBH50D-060
  1MBH50D-060
 
1MBH50D-060
  1MBH50D-060
  1MBH50D-060
 
1MBH50D-060
  1MBH50D-060
 
 
List
10N40C1D ..APT50GF120LR
APT50GF60AR ..FGPF4533
FGPF4536 ..GT5G101
GT5G102 ..HGTD7N60B3S
HGTD7N60C3 ..HGTP7N60A4D
HGTP7N60B3 ..IKW25T120
IKW30N100T ..IRG4PH30K
IRG4PH30KD ..IRGP4066D
IRGP4066D-E ..IXDH35N60BD1
IXDN50N120AU1 ..IXGH15N120B2D1
IXGH15N120BD1 ..IXGH40N120B2D1
IXGH40N120C3 ..IXGN200N60B
IXGN200N60B3 ..IXGR55N120A3H1
IXGR60N60B2 ..IXGX320N60B3
IXGX32N170AH1 ..IXSP20N60B2D1
IXSP24N60B ..MGP7N60ED
MGS05N60D ..MIXA80R1200VA
MIXA80W1200TED ..MWI75-12T8T
MWI80-12T6K ..RJP60D0DPK
RJP60D0DPM ..SGS6N60UF
SGS6N60UFD ..SKM400GB123D
SKM400GB124D ..STGB10NB60S
STGB10NC60HD ..STGW20NC60VD
STGW25H120DF ..VWI35-06P1
 
1MBH50D-060 All IGBT Data Sheet. Parameters and Characteristics. IGBT Cross Reference Database.
 

1MBH50D-060 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: 1MBH50D-060

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 310W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 3V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 82A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 1200

Maximum collector capacity (Cc), pF:

Package: TO3PL

Equivalent transistors for 1MBH50D-060

1MBH50D-060 PDF doc:

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See also transistors datasheet: 1MBH15-120 , 1MBH15D-060 , 1MBH15D-120 , 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , IRG4PC40U , 20N35GVL , 20N60C3DR , 20N60C3R , 27N60C3DR , 27N60C3R , 2N6975 , 2N6976 , 2N6977 .

Keywords

 1MBH50D-060 Datasheet  1MBH50D-060 Datenblatt  1MBH50D-060 RoHS  1MBH50D-060 Distributor
 1MBH50D-060 Application Notes  1MBH50D-060 Component  1MBH50D-060 Circuit  1MBH50D-060 Schematic
 1MBH50D-060 Equivalent  1MBH50D-060 Cross Reference  1MBH50D-060 Data Sheet  1MBH50D-060 Fiche Technique

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