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1MBH50D-060 IGBT (IC) Datasheet. Cross Reference Search. 1MBH50D-060 Equivalent

Type Designator: 1MBH50D-060

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 310W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 3V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 82A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 1200

Maximum collector capacity (Cc), pF:

Package: TO3PL

1MBH50D-060 Transistor Equivalent Substitute - IGBT Cross-Reference Search

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See also transistors datasheet: 1MBH15-120 , 1MBH15D-060 , 1MBH15D-120 , 1MBH20D-060 , 1MBH25-120 , 1MBH25D-120 , 1MBH30D-060 , 1MBH50-060 , IRG4PC40U , 20N35GVL , 20N60C3DR , 20N60C3R , 27N60C3DR , 27N60C3R , 2N6975 , 2N6976 , 2N6977 .

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