IRG4BC10UD IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IRG4BC10UD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 38W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.60V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 5A

Maximum junction temperature (Tj), °C: 150

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220AB

Equivalent transistors for IRG4BC10UD

IRG4BC10UD PDF document for downloads:

1.1. irg4bc10ud.pdf Size:184K _international_rectifier

PD 91677B IRG4BC10UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features Features Features Features Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz in VCE(on) typ. = 2.15V resonant mode G • Generation 4 IGBT design provides tighter @VGE = 15V, IC = 5.0A parameter distribution and higher efficiency than E previous Generation tf (typ.) = 140ns • IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220AB package Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing TO-220AB Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V

2.1. irg4bc10sd.pdf Size:210K _international_rectifier

D IRG4BC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features • Extremely low voltage drop 1.1Vtyp. @ 2A VCES = 600V • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V • Very Tight Vce(on) distribution G • IGBT co-packaged with HEXFREDTM ultrafast, @VGE = 15V, IC = 2.0A ultra-soft-recovery anti-parallel diodes for use E in bridge configurations n-channel • Industry standard TO-220AB package Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and Diode losses TO-220AB Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC =

2.2. irg4bc10kd.pdf Size:210K _international_rectifier

PD -91734B IRG4BC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V VCE(on) typ. = 2.39V • Combines low conduction losses with high G switching speed • Tighter parameter distribution and higher efficiency @VGE = 15V, IC = 5.0A E than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultrasoft recovery antiparallel diodes Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses TO-220AB Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 9.0 IC @ TC = 100°C Continuous Collector Current 5.0 ICM P

2.3. irg4bc10k.pdf Size:158K _international_rectifier

D IRG4BC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C • Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 • Industry standard TO-220AB package @VGE = 15V, IC = 5.0A E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions TO-220AB Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 9.0 IC @ TC = 100°C Continuous Collector Current 5.0 A ICM Pulsed Collector Current Q 18 ILM Clamped Inductive Load Current R 18 tsc Short Circuit Withstand Time 10 µs VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy S 34 mJ PD @ TC = 25°C Maximum Power D

2.4. irg4bc10sd-s.pdf Size:217K _international_rectifier

PD - 94255 IRG4BC10SD-S IRG4BC10SD-L INSULATED GATE BIPOLAR TRANSISTOR WITH Standard Speed ULTRAFAST SOFT RECOVERY DIODE CoPack IGBT Features C • Extremely low voltage drop 1.1Vtyp. @ 2A • S-Series: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives. VCE(on) typ. = 1.10V • Very Tight Vce(on) distribution G • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use @VGE = 15V, IC = 2.0A E in bridge configurations • Industry standard D2Pak & TO-262 packages n-channel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and D2Pak TO-262 Diode losses IRG4BC10SD-S IRG4BC10SD-L Absolute Maximum Ratings Parameter Max.

2.5. irg4bc10s.pdf Size:157K _international_rectifier

PD - 91786A IRG4BC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Extremely low voltage drop; 1.1V typical at 2A • S-Speed: Minimizes power dissipation at up to 3 VCES = 600V KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives, up to 2KHz in VCE(on) typ. = 1.10V G Chopper Applications • Very Tight Vce(on) distribution • Industry standard TO-220AB package @VGE = 15V, IC = 2.0A E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Lower conduction losses than many Power MOSFET''s TO-220AB Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 14 IC @ TC = 100°C Continuous Collector Current 8.0 ICM Pulsed Collector Current Q 18 A ILM Clamped Inductive Load Current R 18 VGE Gate-to-Emitter Voltage ± 20 EARV Reverse Voltage Avalanche Energy S 110 mJ PDTC

See also transistors datasheet: HGTP7N60B3 , HGTP7N60B3D , HGTP7N60C3 , HGTP7N60C3D , IRG4BC10K , IRG4BC10KD , IRG4BC10S , IRG4BC10SD , 40N60C3R , IRG4BC20F , IRG4BC20FD , IRG4BC20K , IRG4BC20KD , IRG4BC20KD-S , IRG4BC20K-S , IRG4BC20S , IRG4BC20SD .

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