IRG4BC20KD IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IRG4BC20KD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 60W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 9A

Maximum junction temperature (Tj), °C: 175

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220AB

Equivalent transistors for IRG4BC20KD

IRG4BC20KD PDF document for downloads:

1.1. irg4bc20k-s.pdf Size:162K _international_rectifier

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VCES = 600V VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.27V switching speed G • Latest generation design provides tighter parameter @VGE = 15V, IC = 9.0A distribution and higher efficiency than previous E generations n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls possible • This part replaces the IRGBC20K-S and IRGBC20M-S devices D 2 Pak Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 16 IC @ TC = 100

1.2. irg4bc20kd-s.pdf Size:222K _international_rectifier

PD -91598A IRG4BC20KD-S INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C • Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.27V parameter distribution and higher efficiency than G previous generation @VGE = 15V, IC = 9.0A • IGBT co-packaged with HEXFREDTM ultrafast, E ultra-soft-recovery anti-parallel diodes for use in n-channel bridge configurations • Industry standard D2Pak package Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible. •HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses. •This part replaces the IRGBC20KD2-S and IRGBC20MD2-S products. D 2 Pak • For hints see

1.3. irg4bc20k.pdf Size:138K _international_rectifier

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 2.27V switching speed G • Latest generation design provides tighter parameter @VGE = 15V, IC = 9.0A distribution and higher efficiency than previous E generations n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls possible • This part replaces the IRGBC20K and IRGBC20M devices TO-220AB Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 16 IC @ TC = 100°C C

1.4. irg4bc20kd.pdf Size:199K _international_rectifier

PD -91599A IRG4BC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C • Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.27V parameter distribution and higher efficiency than G previous generation @VGE = 15V, IC = 9.0A • IGBT co-packaged with HEXFREDTM ultrafast, E ultra-soft-recovery anti-parallel diodes for use in n-channel bridge configurations • Industry standard TO-220AB package Benefits • Latest generation 4 IGBTs offer highest power density motor controls possible • HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses • This part replaces the IRGBC20KD2 and IRGBC20MD2 products TO-220AB • For hints see de

See also transistors datasheet: IRG4BC10K , IRG4BC10KD , IRG4BC10S , IRG4BC10SD , IRG4BC10UD , IRG4BC20F , IRG4BC20FD , IRG4BC20K , GT60M103 , IRG4BC20KD-S , IRG4BC20K-S , IRG4BC20S , IRG4BC20SD , IRG4BC20SD-S , IRG4BC20U , IRG4BC20UD , IRG4BC20W .

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