IRG4BC20S IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IRG4BC20S

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 60W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.6V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 10A

Maximum junction temperature (Tj), °C: 150

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220AB

Equivalent transistors for IRG4BC20S

IRG4BC20S PDF document for downloads:

1.1. irg4bc20sd.pdf Size:287K _international_rectifier

PD- 91793 IRG4BC20SD Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Extremely low voltage drop 1.4Vtyp. @ 10A VCES = 600V • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.4V KHz in brushless DC drives. G • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, @VGE = 15V, IC = 10A E ultra-soft-recovery anti-parallel diodes for use in bridge configurations n-channel • Industry standard TO-220AB package Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and TO-220AB Diode losses Absolute Maximum Ratings Parameter Max. Units VCES Collector-to

1.2. irg4bc20s.pdf Size:157K _international_rectifier

D I I T I T D T I T I T Features C • Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G Generation 3 • Industry standard TO-220AB package @VGE = 15V, IC = 10A E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 19 IC @ TC = 100°C Continuous Collector Current 10 A ICM Pulsed Collector Current Q 38 ILM Clamped Inductive Load Current R 38 VGE Gate-to-Emitter Voltage ± 20 V EARV Reverse Voltage Avalanche Energy S 5.0 mJ

1.3. irg4bc20sd-s.pdf Size:382K _international_rectifier

PD -91794 IRG4BC20SD-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Extremely low voltage drop 1.4Vtyp. @ 10A VCES = 600V • S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.4V KHz in brushless DC drives. G • Very Tight Vce(on) distribution • IGBT co-packaged with HEXFREDTM ultrafast, @VGE = 15V, IC = 10A E ultra-soft-recovery anti-parallel diodes for use in bridge configurations n-channel • Industry standard D2Pak package Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Lower losses than MOSFET's conduction and 2 Diode losses D Pak Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-

See also transistors datasheet: IRG4BC10SD , IRG4BC10UD , IRG4BC20F , IRG4BC20FD , IRG4BC20K , IRG4BC20KD , IRG4BC20KD-S , IRG4BC20K-S , HGTG20N60B3D , IRG4BC20SD , IRG4BC20SD-S , IRG4BC20U , IRG4BC20UD , IRG4BC20W , IRG4BC30F , IRG4BC30FD , IRG4BC30K .

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