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IRG4BC30K-S IGBT (IC) Datasheet. Cross Reference Search. IRG4BC30K-S Equivalent

Type Designator: IRG4BC30K-S

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 100W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.7V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 16A

Maximum junction temperature (Tj), °C: 150

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: D2PAK

IRG4BC30K-S Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC30K-S PDF doc:

1.1. irg4bc30kds.pdf Size:225K _international_rectifier

IRG4BC30K-S
IRG4BC30K-S

PD -91594C IRG4BC30KD-S Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switching speed

1.2. irg4bc30k-s.pdf Size:161K _international_rectifier

IRG4BC30K-S
IRG4BC30K-S

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V switching speed G Latest generation design provides

1.3. irg4bc30kd.pdf Size:196K _international_rectifier

IRG4BC30K-S
IRG4BC30K-S

PD -91595A IRG4BC30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V VCE(on) typ. = 2.21V Combines low conduction losses with high G switching speed

1.4. irg4bc30k.pdf Size:137K _international_rectifier

IRG4BC30K-S
IRG4BC30K-S

D I Short Circuit Rated I T D T I T I T UltraFast IGBT Features Features Features Features Features C High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.21V G switching speed Latest generation design provides t

See also transistors datasheet: IRG4BC20U , IRG4BC20UD , IRG4BC20W , IRG4BC30F , IRG4BC30FD , IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , G20N60B3 , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S .

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