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IRG4BC30S IGBT (IC) Datasheet. Cross Reference Search. IRG4BC30S Equivalent

Type Designator: IRG4BC30S

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 100W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 1.60V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 18A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO220AB

IRG4BC30S Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC30S PDF doc:

1.1. irg4bc30s.pdf Size:161K _international_rectifier

IRG4BC30S
IRG4BC30S

D I I T I T D T I T I T Features C Features Features Features Features Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G Generation 3 Industry standard TO-

1.2. irg4bc30s-s.pdf Size:152K _international_rectifier

IRG4BC30S
IRG4BC30S

PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies (< 1kHz) Generation 4 IGBT design provides tight parameter distribution and high efficiency VCE(on) typ. = 1.4V G @VGE = 15V, IC = 18A E n-channel Benefits Generation 4 IGBTs offer highest effici

1.3. irg4bc30s.pdf Size:164K _igbt_a

IRG4BC30S
IRG4BC30S

 D I I T I T D T I T I T Features C Features Features Features Features • Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G Generation 3 • Industry sta

1.4. auirg4bc30s-s.pdf Size:301K _igbt_a

IRG4BC30S
IRG4BC30S

AUTOMOTIVE GRADE PD - 96340 AUIRG4BC30S-S AUIRG4BC30S-SL Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features • Standard: optimized for minimum saturation VCE(on) typ. = 1.4V G voltage and low operating frequencies (< 1kHz) • Lead-Free, RoHS Compliant E @VGE = 15V, IC = 18A • Automotive Qualified * n-channel Benefits • Typical Applications: PTC

1.5. irg4bc30s-s.pdf Size:156K _igbt_a

IRG4BC30S
IRG4BC30S

PD - 94069 IRG4BC30S-S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tight parameter distribution and high efficiency VCE(on) typ. = 1.4V G @VGE = 15V, IC = 18A E n-channel Benefits • Generation 4 IGBTs offer highe

See also transistors datasheet: IRG4BC20UD , IRG4BC20W , IRG4BC30F , IRG4BC30FD , IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRGB4062D , IRG4BC30U , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U .

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