All IGBT Datasheet

 

IRG4BC30W IGBT (IC) Datasheet. Cross Reference Search. IRG4BC30W Equivalent

Type Designator: IRG4BC30W

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 100W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.70V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 12A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO220AB

IRG4BC30W Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC30W PDF doc:

1.1. irg4bc30w.pdf Size:139K _international_rectifier

IRG4BC30W
IRG4BC30W

D I I T D T I T I T Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E

1.2. irg4bc30w-s.pdf Size:188K _international_rectifier

IRG4BC30W
IRG4BC30W

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E • Low IGBT conduction losses n-channel • Latest

1.3. irg4bc30w.pdf Size:142K _igbt_a

IRG4BC30W
IRG4BC30W

 D I I T D T I T I T Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

1.4. irg4bc30w-s.pdf Size:169K _igbt_a

IRG4BC30W
IRG4BC30W

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E • Low IGBT conduction losses n-channe

See also transistors datasheet: IRG4BC30FD , IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4BC30UD , 10N50E1D , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD .

Search Terms:

 IRG4BC30W - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IRG4BC30W
  IRG4BC30W
  IRG4BC30W
  IRG4BC30W
 
IRG4BC30W
  IRG4BC30W
  IRG4BC30W
  IRG4BC30W
 

social 

LIST

Last Update

IGBT: IXXH60N65C4 | IXXH60N65B4H1 | IXXH60N65B4 | IXXH40N65B4H1 | IXXH40N65B4 | IXXH30N65B4 | IXXH30N60C3 | IXXH30N60B3 | IXXH150N60C3 | IXXH110N65C4 |

Enter a full or partial SMD code with a minimum of 2 letters or numbers