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IRG4BC30W-S IGBT (IC) Datasheet. Cross Reference Search. IRG4BC30W-S Equivalent

Type Designator: IRG4BC30W-S

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 100W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.1V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 12A

Maximum junction temperature (Tj), °C: 150

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: D2PAK

IRG4BC30W-S Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC30W-S PDF doc:

1.1. irg4bc30w.pdf Size:139K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

D I I T D T I T I T Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E

1.2. irg4bc30w-s.pdf Size:188K _international_rectifier

IRG4BC30W-S
IRG4BC30W-S

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E • Low IGBT conduction losses n-channel • Latest

1.3. irg4bc30w.pdf Size:142K _igbt_a

IRG4BC30W-S
IRG4BC30W-S

 D I I T D T I T I T Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.70V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

1.4. irg4bc30w-s.pdf Size:169K _igbt_a

IRG4BC30W-S
IRG4BC30W-S

IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.10V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 12A E • Low IGBT conduction losses n-channe

See also transistors datasheet: IRG4BC30K , IRG4BC30KD , IRG4BC30KD-S , IRG4BC30K-S , IRG4BC30S , IRG4BC30U , IRG4BC30UD , IRG4BC30W , RJP63K2DPK-M0 , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD .

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