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IRG4BC40W IGBT (IC) Datasheet. Cross Reference Search. IRG4BC40W Equivalent

Type Designator: IRG4BC40W

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 160W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.10V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 20A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO220AB

IRG4BC40W Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC40W PDF doc:

1.1. irg4bc40w.pdf Size:129K _international_rectifier

IRG4BC40W
IRG4BC40W

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E

1.2. irg4bc40ws.pdf Size:352K _igbt_a

IRG4BC40W
IRG4BC40W

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V • Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VG

1.3. irg4bc40wl.pdf Size:352K _igbt_a

IRG4BC40W
IRG4BC40W

PD - 95788B IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power C Supply and PFC (power factor correction) applications VCES = 600V • Industry-benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.05V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VG

1.4. irg4bc40w.pdf Size:132K _igbt_a

IRG4BC40W
IRG4BC40W

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC

See also transistors datasheet: IRG4BC30U , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4PH50U , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W .

Search Terms:

 IRG4BC40W - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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