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IRG4BC40W IGBT (IC) Datasheet. Cross Reference Search. IRG4BC40W Equivalent

Type Designator: IRG4BC40W

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 160W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.10V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 20A

Maximum junction temperature (Tj), °C: 150

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO220AB

IRG4BC40W Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4BC40W PDF doc:

1.1. irg4bc40w.pdf Size:129K _international_rectifier

IRG4BC40W
IRG4BC40W

PD - 91654A IRG4BC40W INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications Industry-benchmark switching losses improve VCE(on) typ. = 2.05V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 20A E

2.1. irg4bc40s.pdf Size:157K _international_rectifier

IRG4BC40W
IRG4BC40W

PD - 91455B IRG4BC40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard: optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.32V G Generation 3 Industry standard TO

2.2. irg4bc40u.pdf Size:169K _international_rectifier

IRG4BC40W
IRG4BC40W

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3 @VGE

2.3. irg4bc40f.pdf Size:167K _international_rectifier

IRG4BC40W
IRG4BC40W

D I I T I T D T I T I T Features C Features Features Features Features Fast: optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.50V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V

2.4. irg4bc40k.pdf Size:156K _international_rectifier

IRG4BC40W
IRG4BC40W

D I Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features Short Circuit Rated UltraFast: optimized for high VCES = 600V operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V VCE(on) typ. = 2.1V Generation 4 IGBT design provides higher efficiency G than Generation 3

See also transistors datasheet: IRG4BC30U , IRG4BC30UD , IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4PH50U , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W .

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