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IRG4IBC20KD IGBT (IC) Datasheet. Cross Reference Search. IRG4IBC20KD Equivalent

Type Designator: IRG4IBC20KD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 34W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.27V

Maximum Gate-Emitter Voltage |Veg|, V: 20V

Maximum Collector Current |Ic|, A: 6.3A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS:

Maximum Collector Capacity (Cc), pF: 450pF

Package: ISO220

IRG4IBC20KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4IBC20KD PDF doc:

1.1. irg4ibc20kd.pdf Size:199K _international_rectifier

IRG4IBC20KD
IRG4IBC20KD

PD -91689A IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) Short Circuit Rating 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on) typ. = 2.27V parameter distr

1.2. irg4ibc20fd.pdf Size:223K _international_rectifier

IRG4IBC20KD
IRG4IBC20KD

PD -91750A IRG4IBC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Very Low 1.66V votage drop VCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.66V Fast: Optimized for medium operating G frequencies ( 1-5 kHz in hard switching, >20 k

1.3. irg4ibc20ud.pdf Size:230K _international_rectifier

IRG4IBC20KD
IRG4IBC20KD

PD -91752A IRG4IBC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features 2.5kV, 60s insulation voltage U VCES = 600V 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating VCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant mode

1.4. irg4ibc20w.pdf Size:154K _international_rectifier

IRG4IBC20KD
IRG4IBC20KD

PD 91785A IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improve VCE(on) typ. = 2.16V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 6.5A E L

1.5. irg4ibc20kd.pdf Size:207K _igbt_a

IRG4IBC20KD
IRG4IBC20KD

PD -91689A IRG4IBC20KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C • High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.27V para

1.6. irg4ibc20fd.pdf Size:226K _igbt_a

IRG4IBC20KD
IRG4IBC20KD

PD -91750A IRG4IBC20FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Very Low 1.66V votage drop VCES = 600V • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.66V • Fast: Optimized for medium operating G frequencies ( 1-5 kHz in hard switchi

1.7. irg4ibc20ud.pdf Size:331K _igbt_a

IRG4IBC20KD
IRG4IBC20KD

PD -91752A IRG4IBC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • 2.5kV, 60s insulation voltage … VCES = 600V • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating VCE(on) typ. = 1.85V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant mode • IGBT co-packaged with HEXF

1.8. irg4ibc20w.pdf Size:157K _igbt_a

IRG4IBC20KD
IRG4IBC20KD

PD 91785A IRG4IBC20W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V • 2.5kV, 60s insulation voltage V • Industry-benchmark switching losses improve VCE(on) typ. = 2.16V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 6

See also transistors datasheet: IRG4BC30W , IRG4BC30W-S , IRG4BC40F , IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4BC30W , IRG4IBC20UD , IRG4IBC20W , IRG4IBC30FD , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W , IRG4P254S , IRG4PC30F .

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