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IRG4IBC30FD IGBT (IC) Datasheet. Cross Reference Search. IRG4IBC30FD Equivalent

Type Designator: IRG4IBC30FD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 45W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 1.59V

Maximum gate-emitter voltage |Ueg|, V: 20V

Maximum collector current |Ic|, A: 11A

Maximum junction temperature (Tj), °C: 150

Rise time, nS:

Maximum collector capacity (Cc), pF: 1100pF

Package: ISO220

IRG4IBC30FD Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4IBC30FD PDF doc:

1.1. irg4ibc30fd.pdf Size:223K _international_rectifier

IRG4IBC30FD
IRG4IBC30FD

PD- 91751A IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Very Low 1.59V votage drop VCES = 600V 2.5kV, 60s insulation voltage U 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.59V Fast: Optimized for medium operating G frequencies ( 1-5 kHz in hard switching, >20 @V

1.2. irg4ibc30w.pdf Size:160K _international_rectifier

IRG4IBC30FD
IRG4IBC30FD

PD 91791A IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features C Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V 2.5kV, 60s insulation voltage V Industry-benchmark switching losses improve VCE(on) typ. = 2.1V G efficiency of all power supply topologies 50% reduction of Eoff parameter @VGE = 15V, IC = 12 A E Lo

1.3. irg4ibc30kd.pdf Size:195K _international_rectifier

IRG4IBC30FD
IRG4IBC30FD

PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) Short Circuit Rating 10s @ 125C, VGE = 15V Generation 4 IGBT design provides tighter VCE(on) typ. = 2.21V parameter distr

1.4. irg4ibc30ud.pdf Size:227K _international_rectifier

IRG4IBC30FD
IRG4IBC30FD

PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features 2.5kV, 60s insulation voltage U VCES = 600V 4.8 mm creapage distance to heatsink UltraFast: Optimized for high operating VCE(on) typ. = 1.95V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant mode @VGE

1.5. irg4ibc30s.pdf Size:126K _international_rectifier

IRG4IBC30FD
IRG4IBC30FD

PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features Standard: Optimized for minimum saturation VCES = 600V voltage and low operating freqencies (<1 kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G previous generation Industry standard TO-220 Full-Pak @VG

1.6. irg4ibc30fd.pdf Size:223K _igbt_a

IRG4IBC30FD
IRG4IBC30FD

PD- 91751A IRG4IBC30FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Very Low 1.59V votage drop VCES = 600V • 2.5kV, 60s insulation voltage U • 4.8 mm creapage distance to heatsink VCE(on) typ. = 1.59V • Fast: Optimized for medium operating G frequencies ( 1-5 kHz in hard switchi

1.7. irg4ibc30w.pdf Size:163K _igbt_a

IRG4IBC30FD
IRG4IBC30FD

PD 91791A IRG4IBC30W INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications VCES = 600V • 2.5kV, 60s insulation voltage V • Industry-benchmark switching losses improve VCE(on) typ. = 2.1V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 12

1.8. irg4ibc30kd.pdf Size:198K _igbt_a

IRG4IBC30FD
IRG4IBC30FD

PD -91690A IRG4IBC30KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features Features Features Features Features C • High switching speed optimized for up to 25kHz VCES = 600V with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter VCE(on) typ. = 2.21V para

1.9. irg4ibc30ud.pdf Size:231K _igbt_a

IRG4IBC30FD
IRG4IBC30FD

PD91753A IRG4IBC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • 2.5kV, 60s insulation voltage U VCES = 600V • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating VCE(on) typ. = 1.95V frequencies 8-40 kHz in hard switching, >200 G kHz in resonant m

1.10. irg4ibc30s.pdf Size:129K _igbt_a

IRG4IBC30FD
IRG4IBC30FD

PD - 94293 IRG4IBC30S INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating freqencies (<1 kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.4V G previous generation • Industry standard TO-220 Full

See also transistors datasheet: IRG4BC40K , IRG4BC40S , IRG4BC40U , IRG4BC40W , IRG4IBC20FD , IRG4IBC20KD , IRG4IBC20UD , IRG4IBC20W , HGTG20N60A4D , IRG4IBC30KD , IRG4IBC30UD , IRG4IBC30W , IRG4P254S , IRG4PC30F , IRG4PC30FD , IRG4PC30K , IRG4PC30KD .

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