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IRG4PC40UD IGBT (IC) Datasheet. Cross Reference Search. IRG4PC40UD Equivalent

Type Designator: IRG4PC40UD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 160W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V:

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 20A

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO247AC

IRG4PC40UD Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4PC40UD PDF doc:

1.1. irg4pc40u.pdf Size:148K _international_rectifier

IRG4PC40UD
IRG4PC40UD

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3 @VGE =

1.2. irg4pc40ud.pdf Size:245K _international_rectifier

IRG4PC40UD
IRG4PC40UD

PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.72V Generation 4 IGBT design provides tighter G parameter distribution and high

1.3. irg4pc40u.pdf Size:153K _igbt_a

IRG4PC40UD
IRG4PC40UD

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.72V G parameter distribution and higher efficiency than Generation 3

1.4. irg4pc40ud.pdf Size:238K _igbt_a

IRG4PC40UD
IRG4PC40UD

PD 9.1467D IRG4PC40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.72V • Generation 4 IGBT design provides tighter G parameter distribution a

See also transistors datasheet: IRG4PC30UD , IRG4PC30W , IRG4PC40F , IRG4PC40FD , IRG4PC40K , IRG4PC40KD , IRG4PC40S , IRG4PC40U , IRG4PC50UD , IRG4PC40W , IRG4PC50F , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD .

Search Terms:

 IRG4PC40UD - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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