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IRG4PC50F IGBT (IC) Datasheet. Cross Reference Search. IRG4PC50F Equivalent

Type Designator: IRG4PC50F

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 200W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V:

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 39A

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO247AC

IRG4PC50F Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4PC50F PDF doc:

1.1. irg4pc50f.pdf Size:146K _international_rectifier

IRG4PC50F
IRG4PC50F

D I I T I T D T I T I T Features C Features Features Features Features Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 3

1.2. irg4pc50fd.pdf Size:211K _international_rectifier

IRG4PC50F
IRG4PC50F

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V Generation 4 IGBT design provides tighter G parameter distribution and higher effi

1.3. irg4pc50f.pdf Size:152K _igbt_a

IRG4PC50F
IRG4PC50F

 D I I T I T D T I T I T Features C Features Features Features Features • Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V,

1.4. irg4pc50fd.pdf Size:214K _igbt_a

IRG4PC50F
IRG4PC50F

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V • Generation 4 IGBT design provides tighter G parameter distribution and high

See also transistors datasheet: IRG4PC40F , IRG4PC40FD , IRG4PC40K , IRG4PC40KD , IRG4PC40S , IRG4PC40U , IRG4PC40UD , IRG4PC40W , RJP30H1DPP-M0 , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W .

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 IRG4PC50F - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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