All IGBT Datasheet

 

IRG4PC50KD IGBT (IC) Datasheet. Cross Reference Search. IRG4PC50KD Equivalent

Type Designator: IRG4PC50KD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 104W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V:

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 30A

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO247AC

IRG4PC50KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4PC50KD PDF doc:

1.1. irg4pc50k.pdf Size:115K _international_rectifier

IRG4PC50KD
IRG4PC50KD

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 600V tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed Latest generation design provides t

1.2. irg4pc50kd.pdf Size:374K _international_rectifier

IRG4PC50KD
IRG4PC50KD

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10s @125C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher effic

1.3. irg4pc50k.pdf Size:121K _igbt_a

IRG4PC50KD
IRG4PC50KD

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed • Latest generation design

1.4. irg4pc50kd.pdf Size:31K _igbt_a

IRG4PC50KD
IRG4PC50KD

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher

See also transistors datasheet: IRG4PC40KD , IRG4PC40S , IRG4PC40U , IRG4PC40UD , IRG4PC40W , IRG4PC50F , IRG4PC50FD , IRG4PC50K , 12N60C3D , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PH20KD .

Search Terms:

 IRG4PC50KD - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


IRG4PC50KD
  IRG4PC50KD
  IRG4PC50KD
  IRG4PC50KD
 
IRG4PC50KD
  IRG4PC50KD
  IRG4PC50KD
  IRG4PC50KD
 

social 

LIST

Last Update

IGBT: IXXN200N60C3H1 | IXXN200N60B3H1 | IXXN200N60B3 | IXXN110N65C4H1 | IXXN110N65B4H1 | IXXN100N60B3H1 | IXGQ90N27PB | IXGQ85N33PCD1 | IXGQ240N30PB | IXGQ170N30PB |

Enter a full or partial SMD code with a minimum of 2 letters or numbers