IRG4PC50U IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IRG4PC50U

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 200W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 27A

Maximum junction temperature (Tj), °C: 175

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247AC

Equivalent transistors for IRG4PC50U

IRG4PC50U PDF document for downloads:

1.1. irg4pc50u.pdf Size:147K _international_rectifier

D I ? I T I T D T I T I T Features C Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.65V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E • Industry standard TO-247AC package n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 55 IC @ TC = 100°C Continuous Collector Current 27 A ICM Pulsed Collector Current Q 220 ILM Clamped Inductive Load Current R 220 VGE Gate-to-Emitter V

1.2. irg4pc50ud.pdf Size:213K _international_rectifier

PD 91471B IRG4PC50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.65V • Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 27A E • IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent TO-247AC industry-standard Generation 3 IR IGBT's Absolute M

2.1. irg4pc50f.pdf Size:146K _international_rectifier

D I I T I T D T I T I T Features C Features Features Features Features • Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.45V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E • Industry standard TO-247AC package n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 70 IC @ TC = 100°C Continuous Collector Current 39 A ICM Pulsed Collector Current Q 280 ILM Clamped Inductive Load Current R 280 VGE Gate-to-Emitter Voltage ± 20

2.2. irg4pc50kd.pdf Size:374K _international_rectifier

PD -91582B IRG4PC50KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high VCES = 600V operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE = 15V VCE(on) typ. = 1.84V Generation 4 IGBT design provides tighter parameter G distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 30A E IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultra-soft recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247AC package Benefits Generation 4 IGBTs offer highest efficiencies available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V

2.3. irg4pc50w.pdf Size:157K _international_rectifier

D IRG4PC50W I T D T I T I T C Features Features Features Features Features • Designed expressly for Switch-Mode Power VCES = 600V Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve VCE(on) max. = 2.30V G efficiency of all power supply topologies • 50% reduction of Eoff parameter @VGE = 15V, IC = 27A E • Low IGBT conduction losses n-channel • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz) TO-247AC Absolute Maximum Ratings Parameter Max. Units

2.4. irg4pc50s.pdf Size:164K _international_rectifier

D IRG4PC50S I T I T D T I T I T Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 • Industry standard TO-247AC package @VGE = 15V, IC = 41A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 70 IC @ TC = 100°C Continuous Collector Current 41 A ICM Pulsed Collector Current Q 140 ILM Clamped Inductive Load Current R 140 VGE Gate-to-Emitter Voltage ± 20 V E

2.5. irg4pc50fd.pdf Size:211K _international_rectifier

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • Fast: Optimized for medium operating VCES = 600V frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). VCE(on) typ. = 1.45V • Generation 4 IGBT design provides tighter G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 39A E • IGBT co-packaged with HEXFREDTM ultrafast, n-channel ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent TO-247AC industry-standard Generation 3 IR IGBT's Absolute Maxim

2.6. irg4pc50s-p.pdf Size:144K _international_rectifier

D IRG4PC50S-P Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features • Standard: Optimized for minimum saturation VCES = 600V voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.28V G Generation 3 • Industry standard TO-247AC package @VGE = 15V, IC = 41A E • Surface Mountable n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's Surface Mountable TO-247 Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Breakdown Voltage 600 V IC @ TC = 25°C Continuous Collector Current 70 IC @ TC = 100°C Continuous Collector Current 41 A ICM Pulsed Collector Current Q 140 ILM Clamped Inductive Load Current R 14

2.7. irg4pc50k.pdf Size:115K _international_rectifier

PD - 91583B IRG4PC50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features Features Features Features Features • High short circuit rating optimized for motor control, VCES = 600V tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high VCE(on) typ. = 1.84V G switching speed • Latest generation design provides tighter parameter @VGE = 15V, IC = 30A E distribution and higher efficiency than previous generations n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls possible • This part replaces the IRGPC50K and IRGPC50M devices TO-247AC Absolute Maximum Ratings Parameter Max. Units VCES Collector-to-Emitter Voltage 600 V IC @ TC = 25°C Continuous Collector Current 52 IC @ TC = 100°C Con

See also transistors datasheet: IRG4PC40U , IRG4PC40UD , IRG4PC40W , IRG4PC50F , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , G20N60B3 , IRG4PC50UD , IRG4PC50W , IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD .

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