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IRG4PF50W IGBT (IC) Datasheet. Cross Reference Search. IRG4PF50W Equivalent

Type Designator: IRG4PF50W

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 200W

Maximum Collector-Emitter Voltage |Vce|, V: 900V

Collector-Emitter saturation Voltage |Vcesat|, V:

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 28A

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: TO247AC

IRG4PF50W Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4PF50W PDF doc:

1.1. irg4pf50wd.pdf Size:358K _international_rectifier

IRG4PF50W
IRG4PF50W

PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, IC = 28A E

1.2. irg4pf50w.pdf Size:138K _international_rectifier

IRG4PF50W
IRG4PF50W

PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, IC = 28A E • Latest technology IGBT design offe

1.3. irg4pf50wd.pdf Size:253K _igbt_a

IRG4PF50W
IRG4PF50W

PD- 91788 IRG4PF50WD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, I

1.4. irg4pf50w.pdf Size:132K _igbt_a

IRG4PF50W
IRG4PF50W

PD - 91710 IRG4PF50W INSULATED GATE BIPOLAR TRANSISTOR Features C • Optimized for use in Welding and Switch-Mode VCES = 900V Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies VCE(on) typ. = 2.25V G • 50% reduction of Eoff parameter • Low IGBT conduction losses @VGE = 15V, IC = 28A E • Latest technology IGB

See also transistors datasheet: IRG4PC50F , IRG4PC50FD , IRG4PC50K , IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG7R313U , IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , IRG4PH40U .

Search Terms:

 IRG4PF50W - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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