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IRG4PH20KD IGBT (IC) Datasheet. Cross Reference Search. IRG4PH20KD Equivalent

Type Designator: IRG4PH20KD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 60W

Maximum collector-emitter voltage |Uce|, V: 1200

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 5A

Maximum junction temperature (Tj), °C: 175

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247AC

IRG4PH20KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4PH20KD PDF doc:

1.1. irg4ph20k.pdf Size:229K _international_rectifier

IRG4PH20KD
IRG4PH20KD

PD -91776 IRG4PH20K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 3.17V G switching speed Latest generation design provides tighter parameter @VGE = 15V, IC = 5.0A E di

1.2. irg4ph20kd.pdf Size:276K _international_rectifier

IRG4PH20KD
IRG4PH20KD

PD- 91777 IRG4PH20KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V VCE(on) typ. = 3.17V Combines low conduction losses with high G switching speed @VGE = 15V, IC = 5.0A Tighter parameter distr

4.1. irg4ph50k.pdf Size:92K _international_rectifier

IRG4PH20KD
IRG4PH20KD

PD - 9.1576 IRG4PH50K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V, TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.77V switching speed G Latest generation design provides tighter @VGE = 15V, IC = 24A E parameter distributi

4.2. irg4ph40s.pdf Size:127K _international_rectifier

IRG4PH20KD
IRG4PH20KD

PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Extremely low on state voltage drop 1.0V typical at VCES = 1200V 5.0A Extremely low VCE(on) variation from lot to lot Industry standard TO-247AC package VCE(on) typ. = 1.46V G @VGE = 15V, IC = 20A E N-channel Benefits High current density systems Optimized for specific application cond

4.3. irg4ph40ud.pdf Size:220K _international_rectifier

IRG4PH20KD
IRG4PH20KD

PD- 91621B IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.43V New IGBT design provides tighter G parameter distribution and higher e

4.4. irg4ph50s.pdf Size:130K _international_rectifier

IRG4PH20KD
IRG4PH20KD

PD -91712A IRG4PH50S I T D T I T I T I T Features Features Features Features Features C Standard: Optimized for minimum saturation VCES =1200V voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.47V G Generation 3 Industry standard TO-

4.5. irg4ph50ud.pdf Size:229K _international_rectifier

IRG4PH20KD
IRG4PH20KD

PD 91573A IRG4PH50UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.78V New IGBT design provides tighter G parameter distribution and higher ef

4.6. irg4ph30kd.pdf Size:212K _international_rectifier

IRG4PH20KD
IRG4PH20KD

PD- 91579A IRG4PH30KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V VCE(on) typ. = 3.10V Combines low conduction losses with high G switching speed @VGE =

4.7. irg4ph40u.pdf Size:163K _international_rectifier

IRG4PH20KD
IRG4PH20KD

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.43V G parameter distribution and higher efficiency than previous generations

4.8. irg4ph50u.pdf Size:134K _international_rectifier

IRG4PH20KD
IRG4PH20KD

PD - 91574B IRG4PH50U Ultra Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.78V G parameter distribution and higher efficiency than previous generations

4.9. irg4ph30k.pdf Size:161K _international_rectifier

IRG4PH20KD
IRG4PH20KD

D IRG4PH30K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 3.10V G switching speed Latest generation design provides tighter

4.10. irg4ph40kd.pdf Size:217K _international_rectifier

IRG4PH20KD
IRG4PH20KD

PD- 91577B IRG4PH40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V VCE(on) typ. = 2.74V Combines low conduction losses with high G switching speed @VGE =

4.11. irg4ph40k.pdf Size:157K _international_rectifier

IRG4PH20KD
IRG4PH20KD

D IRG4PH40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.74V G switching speed Latest generation design provides tighter

4.12. irg4ph50kd.pdf Size:224K _international_rectifier

IRG4PH20KD
IRG4PH20KD

PD- 91575B IRG4PH50KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V VCE(on) typ. = 2.77V Combines low conduction losses with high G switching speed @VGE =

See also transistors datasheet: IRG4PC50KD , IRG4PC50S , IRG4PC50U , IRG4PC50UD , IRG4PC50W , IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PC50W , IRG4PH30K , IRG4PH30KD , IRG4PH40K , IRG4PH40KD , IRG4PH40U , IRG4PH40UD , IRG4PH50K , IRG4PH50KD .

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 IRG4PH20KD - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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