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IRG4PH40K IGBT (IC) Datasheet. Cross Reference Search. IRG4PH40K Equivalent

Type Designator: IRG4PH40K

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 160W

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 15A

Maximum junction temperature (Tj), °C: 175

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: TO247AC

IRG4PH40K Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4PH40K PDF doc:

1.1. irg4ph40kd.pdf Size:217K _international_rectifier

IRG4PH40K
IRG4PH40K

PD- 91577B IRG4PH40KD Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V VCE(on) typ. = 2.74V Combines low conduction losses with high G switching speed @VGE =

1.2. irg4ph40k.pdf Size:157K _international_rectifier

IRG4PH40K
IRG4PH40K

D IRG4PH40K Short Circuit Rated I T D T I T I T UltraFast IGBT C Features Features Features Features Features High short circuit rating optimized for motor control, VCES = 1200V tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with high VCE(on) typ. = 2.74V G switching speed Latest generation design provides tighter

2.1. irg4ph40s.pdf Size:127K _international_rectifier

IRG4PH40K
IRG4PH40K

PD -91808 IRG4PH40S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Extremely low on state voltage drop 1.0V typical at VCES = 1200V 5.0A Extremely low VCE(on) variation from lot to lot Industry standard TO-247AC package VCE(on) typ. = 1.46V G @VGE = 15V, IC = 20A E N-channel Benefits High current density systems Optimized for specific application cond

2.2. irg4ph40ud.pdf Size:220K _international_rectifier

IRG4PH40K
IRG4PH40K

PD- 91621B IRG4PH40UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 2.43V New IGBT design provides tighter G parameter distribution and higher e

2.3. irg4ph40u.pdf Size:163K _international_rectifier

IRG4PH40K
IRG4PH40K

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 1200V frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter VCE(on) typ. = 2.43V G parameter distribution and higher efficiency than previous generations

See also transistors datasheet: IRG4PC50UD , IRG4PC50W , IRG4PF50W , IRG4PF50WD , IRG4PH20K , IRG4PH20KD , IRG4PH30K , IRG4PH30KD , FGPF4536 , IRG4PH40KD , IRG4PH40U , IRG4PH40UD , IRG4PH50K , IRG4PH50KD , IRG4PH50S , IRG4PH50U , IRG4PH50UD .

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