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IRG4RC10KD IGBT (IC) Datasheet. Cross Reference Search. IRG4RC10KD Equivalent

Type Designator: IRG4RC10KD

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 38W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.62V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 5A

Maximum junction temperature (Tj), °C: 150

Rise time, nS:

Maximum collector capacity (Cc), pF:

Package: D-PAK

IRG4RC10KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4RC10KD PDF doc:

1.1. irg4rc10k.pdf Size:134K _international_rectifier

IRG4RC10KD
IRG4RC10KD

PD 91735A IRG4RC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 Industry standard TO-252AA package @V

1.2. irg4rc10kd.pdf Size:190K _international_rectifier

IRG4RC10KD
IRG4RC10KD

PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V VCE(on) typ. = 2.39V Generation 4 IGBT design provides tighter G parameter distribution and hig

2.1. irg4rc10sd.pdf Size:189K _international_rectifier

IRG4RC10KD
IRG4RC10KD

2, ' $%&) IRG4RC10SD Standard Speed CoPack INSULATED GATE BIPOLAR TRANSISTOR WITH IGBT ULTRAFAST SOFT RECOVERY DIODE C Features Extremely low voltage drop 1.1V(typ) @ 2A VCES = 600V S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 VCE(on) typ. = 1.10V KHz in brushless DC drives. G Tight parameter distribution IGBT co-packaged

2.2. irg4rc10ud.pdf Size:191K _international_rectifier

IRG4RC10KD
IRG4RC10KD

PD 91571A I UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Features Features Features Features UltraFast: Optimized for medium operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). VCE(on) typ. = 2.15V Generation 4 IGBT design provides tighter parameter distribution and high

2.3. irg4rc10u.pdf Size:131K _international_rectifier

IRG4RC10KD
IRG4RC10KD

PD - 91572A IRG4RC10U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) Generation 4 IGBT design provides tighter VCE(on) typ. = 2.15V G parameter distribution and higher efficiency than previous genera

2.4. irg4rc10s.pdf Size:120K _international_rectifier

IRG4RC10KD
IRG4RC10KD

PD - 91732A IRG4RC10S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C Extremely low voltage drop; 1.0V typical at 2A, 100C VCES = 600V Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) Generation 4 IGBT design provides tighter VCE(on) typ. = 1.10V G parameter distribution and higher efficiency than previous generati

See also transistors datasheet: IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD , IRG4PSC71U , IRG4PSC71UD , IRG4PSH71K , IRG4PSH71KD , IRG4RC10K , IRG4PH50UD , IRG4RC10S , IRG4RC10SD , IRG4RC10U , IRG4RC10UD , IRG4ZC70UD , IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD .

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 IRG4RC10KD - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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