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IRG4RC10KD IGBT (IC) Datasheet. Cross Reference Search. IRG4RC10KD Equivalent

Type Designator: IRG4RC10KD

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W: 38W

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V: 2.62V

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 5A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS:

Maximum Collector Capacity (Cc), pF:

Package: D-PAK

IRG4RC10KD Transistor Equivalent Substitute - IGBT Cross-Reference Search

IRG4RC10KD PDF doc:

1.1. irg4rc10k.pdf Size:134K _international_rectifier

IRG4RC10KD
IRG4RC10KD

PD 91735A IRG4RC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10s @ 125C, VGE = 15V Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 Industry standard TO-252AA package @V

1.2. irg4rc10kd.pdf Size:190K _international_rectifier

IRG4RC10KD
IRG4RC10KD

PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V VCE(on) typ. = 2.39V Generation 4 IGBT design provides tighter G parameter distribution and hig

1.3. irg4rc10k.pdf Size:138K _igbt_a

IRG4RC10KD
IRG4RC10KD

PD 91735A IRG4RC10K Short Circuit Rated INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit VCES = 600V Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency VCE(on) typ. = 2.39V G than Generation 3 • Industry standard TO-252AA

1.4. irg4rc10kd.pdf Size:193K _igbt_a

IRG4RC10KD
IRG4RC10KD

PD 91736A IRG4RC10KD INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C Features • Short Circuit Rated UltraFast: Optimized for VCES = 600V high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V VCE(on) typ. = 2.39V • Generation 4 IGBT design provides tighter G parameter distributio

See also transistors datasheet: IRG4PH50UD , IRG4PSC71K , IRG4PSC71KD , IRG4PSC71U , IRG4PSC71UD , IRG4PSH71K , IRG4PSH71KD , IRG4RC10K , IRG4PH50UD , IRG4RC10S , IRG4RC10SD , IRG4RC10U , IRG4RC10UD , IRG4ZC70UD , IRG4ZC71KD , IRG4ZH50KD , IRG4ZH70UD .

Search Terms:

 IRG4RC10KD - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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