2SH14 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: 2SH14

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 30A

Maximum junction temperature (Tj), °C: 175

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO3P

Equivalent transistors for 2SH14

2SH14 PDF document for downloads:

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See also transistors datasheet: 2N6977 , 2N6978 , 2PG352 , 2PG401 , 2PG402 , 2SH11 , 2SH12 , 2SH13 , HGTG20N60A4 , 2SH15 , 2SH16 , 2SH17 , 2SH18 , 2SH19 , 2SH20 , 2SH21 , 2SH22 .

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