IXGD10N60 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGD10N60

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W: 60W

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V: 2.5V

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 10A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 600

Maximum collector capacity (Cc), pF:

Package: TO257

Equivalent transistors for IXGD10N60

IXGD10N60 PDF document for downloads:

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See also transistors datasheet: IXGA15N120B , IXGA15N120C , IXGA20N100 , IXGA20N60B , IXGA7N60B , IXGA7N60C , IXGA8N100 , IXGD10N100 , IRG4BC40S , IXGD10N60A , IXGD17N100 , IXGD20N60A , IXGD25N100 , IXGD25N120 , IXGD60N60 , IXGH10N100 , IXGH10N100A .

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