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2SH18 IGBT (IC) Datasheet. Cross Reference Search. 2SH18 Equivalent

Type Designator: 2SH18

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 18A

Maximum junction temperature (Tj), Β°C: 175

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO220AB

2SH18 Transistor Equivalent Substitute - IGBT Cross-Reference Search

2SH18 PDF doc:

1.1. 2sh18.pdf Size:43K _hitachi

2SH18
2SH18

ADE–208–291 (Z) 2SH18 Silicon N-Channel IGBT 1st. Edition Feb. 1995 Application TO–220AB High speed power switching Features 2 • High speed switching • Low on saturation voltage 1 1. Gate 1 2. Collector 2 3 3. Emitter 3 Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit ——————————————————————————————————————————— Collector to emitter voltage VCES 600 V ——

See also transistors datasheet: 2PG402 , 2SH11 , 2SH12 , 2SH13 , 2SH14 , 2SH15 , 2SH16 , 2SH17 , IRG4PC60F , 2SH19 , 2SH20 , 2SH21 , 2SH22 , 2SH26 , 2SH27 , 2SH28 , 2SH29 .

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