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IXGH28N60D1 IGBT. Datasheet pdf. Equivalent

Type Designator: IXGH28N60D1

Type of IGBT Channel: N-Channel

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Maximum Collector Current |Ic|, A: 40A

Maximum Junction Temperature (Tj), °C: 175

Rise Time, nS: 0

Package: TO247

IXGH28N60D1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXGH28N60D1 PDF doc:

1.1. ixgh28n60b3d1.pdf Size:65K _igbt

IXGH28N60D1
IXGH28N60D1

Advance Technical Information IXGH28N60B3D1 VCES = 600V PolarHVTM IGBT IC110 = 28A ≤ ≤ VCE(sat) ≤ 1.8V ≤ ≤ TO-247 (IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous ± 20 V G VGEM Transient ± 30 V C (TAB) C E IC25 TC = 25°C 66 A IC110 TC = 110°C 28 A IF110 TC = 110°C 10 A

1.2. ixgh28n60bd1.pdf Size:515K _igbt

IXGH28N60D1
IXGH28N60D1

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD (IXGH) IC25 TC = 25°C40 A IC90 TC = 90°C28 A ICM TC = 25°C, 1 ms 80 A

1.3. ixgh28n60b.pdf Size:588K _igbt

IXGH28N60D1
IXGH28N60D1

Low VCE(sat) IGBT IXGH 28N60B VCES = 600 V IXGT 28N60B IC25 = 40 A VCE(sat) = 2.0 V Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V C (TAB) E VGES Continuous ±20 V VGEM Transient ±30 V TO-247 AD IC25 TC = 25°C40 A (IXGH) IC90 TC = 90°C28 A ICM TC = 25°C, 1 ms 80 A C (TAB) SSOA VGE = 15 V,

Datasheet: IXGH25N100A , IXGH25N100AU1 , IXGH25N100U1 , IXGH25N120 , IXGH28N30 , IXGH28N30A , IXGH28N30B , IXGH28N60B , HGTG30N60A4D , IXGH28N90B , IXGH30N30 , IXGH30N30S , IXGH30N60B , IXGH30N60BD1 , IXGH30N60BU1 , IXGH31N60 , IXGH31N60D1 .

 


IXGH28N60D1
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