IXGN200N60 IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXGN200N60

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 600V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 200A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 2.5

Maximum collector capacity (Cc), pF:

Package: ISOTOP

Equivalent transistors for IXGN200N60

IXGN200N60 PDF document for downloads:

1.1. ixgn200n60b.pdf Size:561K _ixys

IXGN 200N60B VCES = 600 V HiPerFASTTM IGBT IC25 = 200 A VCE(sat) = 2.1 V E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V VGES Continuous ±20 V VGEM Transient ±30 V E IC25 TC = 25°C 200 A C IL Terminal Current Limit 100 A IC90 TC = 90°C 120 A G = Gate, C = Collector, E = Emitter either emitter terminal can be used as ICM TC = 25°C, 1 ms 400 A Main or Kelvin Emitter SSOA VGE = 15 V, TVJ = 125°C, RG = 2.4 ? ICM = 200 A (RBSOA) Clamped inductive load, L = 30 µH @ 0.8 VCES PC TC = 25°C 600 W Features International standard package TJ -55 ... +150 °C miniBLOC TJM 150 °C Aluminium nitride isolation Tstg -55 ... +150 °C - high power dissipation Isolation voltage 3000 V~ VISOL 50/60 Hz t = 1 min 2500 V~ Very high current, fast switching IGBT IISOL ? 1 mA t = 1 s 3000 V~ Low VCE(sat) - for minimum on-state conduction Md Mounting torque 1.5/13 Nm/lb.in.

1.2. ixgn200n60a2.pdf Size:553K _ixys

IXGN 200N60A2 VCES = 600 V IGBT IC25 = 200 A Optimized for Switching VCE(sat) = 1.35 V up to 5 kHz Preliminary Data Sheet E Symbol Test Conditions Maximum Ratings SOT-227B, miniBLOC E VCES TJ = 25°C to 150°C 600 V G VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V VGES Continuous ±20 V VGEM Transient ±30 V E IC25 TC = 25°C 200 A C IC110 TC = 110°C 100 A ICM TC = 25°C, 1 ms 400 A G = Gate, C = Collector, E = Emitter either emitter terminal can be used as SSOA VGE = 15 V, TVJ = 125°C, RG = 2.0 ? ICM = 200 A Main or Kelvin Emitter (RBSOA) Clamped inductive load @ 0.8 VCES PC TC = 25°C 700 W TJ -55 ... +150 °C Features International standard package TJM 150 °C miniBLOC Tstg -55 ... +150 °C Aluminium nitride isolation - high power dissipation VISOL 50/60 Hz t = 1 min 2500 V~ Isolation voltage 3000 V~ IISOL ? 1 mA t = 1 s 3000 V~ Very high current IGBT Md Mounting torque 1.5/13 Nm/lb.in. Low VCE(sat) for minimum on-state Terminal connectio

1.3. ixgn200n60b3.pdf Size:186K _ixys

VCES = 600V IXGN200N60B3 GenX3TM 600V IGBT IC110 = 200A ? VCE(sat) ? ? 1.50V ? ? Medium-Speed Low-Vsat PT IGBT for 5-40kHz Switching SOT-227B, miniBLOC E153432 E Symbol Test Conditions Maximum Ratings G VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M? 600 V VGES Continuous ±20 V E VGEM Transient ±30 V C IC25 TC = 25°C 300 A IC110 TC = 110°C 200 A G = Gate, C = Collector, E = Emitter Either Emitter Terminal can be used as ILRMS Terminal Current Limit 200 A Main or Kelvin Emitter ICM TC = 25°C, 1ms 1200 A SSOA VGE= 15V, TVJ = 125°C, RG = 1? ICM = 300 A (RBSOA) Clamped Inductive Load VCE ? VCES Features PC TC = 25°C 830 W International Standard Package TJ - 55 ... +150 °C miniBLOC TJM 150 °C UL Recognized Aluminium Nitride Isolation Tstg - 55 ... +150 °C - High Power Dissipation VISOL 50/60Hz t = 1min 2500 V~ Isolation Voltage 3000 V~ IISOL ? 1mA t = 1s 3000 V~ Very High Current IGBT Md Mounting Torque

See also transistors datasheet: IXGK50N60BU1 , IXGK60N60 , IXGK80N60A , IXGK80N60AU1 , IXGM17N100 , IXGM17N100A , IXGM25N100 , IXGM25N100A , MKI100-12F8 , IXGN200N60A , IXGN200N60B , IXGN50N60B , IXGN50N60BD2 , IXGN50N60BD3 , IXGN60N60 , IXGP12N100 , IXGP12N100A .

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