IXSH10N120A IGBT Transistor Datasheet. Parameters and Characteristics.

Type Designator: IXSH10N120A

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1200V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 20A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO247

Equivalent transistors for IXSH10N120A

IXSH10N120A PDF document for downloads:

3.1. ixsh10n60b2d1_ixsq10n60b2d1.pdf Size:610K _ixys

High Speed IGBT IXSH 10N60B2D1 VCES = 600 V IXSQ 10N60B2D1 with Diode IC25 = 20 A Short Circuit SOA Capability VCE(sat) = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 M? 600 V VGES Continuous ± 20 V VGEM Transient ± 30 V G (TAB) C E IC25 TC = 25°C20 A IC110 TC = 110°C10 A TO-3P (IXSQ) IF(110) 11 A ICM TC = 25°C, 1 ms 30 A SSOA VGE= 15 V, TJ = 125°C, RG = 82? ICM = 20 A (RBSOA) Clamped inductive load, VGE = 20 V @ 0.8 VCES tSC VGE = 15 V, VCE = 360 V, TJ = 125°C 10 µs G C (SCSOA) RG = 150 ?, non repetitive (TAB) E PC TC = 25°C 100 W G = Gate C = Collector E = Emitter TAB = Collector TJ -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C • International standard package Md Mounting torque 1.3/10 Nm/lb. in • Guaranteed Short Circuit SOA capability Weight TO-247 5 g • Low VCE(sat) TO-3P 5 g - for low on-state conduction losses • High current

5.1. ixsh15n120b_ixst15n120b.pdf Size:54K _ixys

IXSH 15N120B HIGH Voltage IGBT IC25 = 30 A IXST 15N120B VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V VGES Continuous ±20 V (TAB) G VGEM Transient ±30 V C E IC25 TC = 25°C30 A IC90 TC = 90°C15 A TO-268 (IXST) ICM TC = 25°C, 1 ms 60 A SSOA VGE= 15 V, TJ = 125°C, RG = 10 W ICM = 40 A G (RBSOA) Clamped inductive load @ 0.8 VCES E (TAB) tSC TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W 10 ms Non repetitive PC TC = 25°C 150 W TJ -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C Md Mounting torque 1.13/10 Nm/lb.in. (TO-247) Maximum lead temperature for soldering 300 °C 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering (TO-268) 260 °C Features Weight TO-247 6 g • High Blocking Voltage TO-268 4 g • Epitaxial Silicon drift region - fast switching - small tail

5.2. ixsh15n120bd1_ixst15n120bd1.pdf Size:56K _ixys

IXSH 15N120BD1 HIGH Voltage IGBT IC25 = 30 A IXST 15N120BD1 with Diode VCES = 1200 V "S" Series - Improved SCSOA Capability VCE(sat) = 3.4 V Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD (IXSH) VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1200 V (TAB) VGES Continuous ±20 V G C VGEM Transient ±30 V E IC25 TC = 25°C30 A TO-268 ( IXST) IC90 TC = 90°C15 A ICM TC = 25°C, 1 ms 60 A G SSOA VGE= 15 V, TJ = 125°C, RG = 10 W ICM = 40 A E (TAB) (RBSOA) Clamped inductive load @ 0.8 VCES tSC TJ = 125°C, VGE = 720 V; VGE = 15 V, RG = 10 W 10 ms Non repetitive PC TC = 25°C 150 W TJ -55 ... +150 °C Features TJM 150 °C Tstg -55 ... +150 °C • High Blocking Voltage • Epitaxial Silicon drift region Md Mounting torque 1.13/10 Nm/lb.in. (TO-247) - fast switching Maximum lead temperature for soldering 300 °C - small tail current 1.6 mm (0.062 in.) from case for 10 s - low switching losses Maximum tab temperature for soldering (

See also transistors datasheet: IXGT32N60BD1 , IXGT32N60CD1 , IXGT50N60B , IXGT60N60 , IXGX120N60B , IXGX50N60AU1 , IXSA12N60AU1 , IXSA16N60 , IRG4PC40W , IXSH10N120AU1 , IXSH15N120AU1 , IXSH15N120B , IXSH16N60U1 , IXSH20N60AU1 , IXSH20N60U1 , IXSH24N60 , IXSH24N60A .

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