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IXSH25N100 IGBT (IC) Datasheet. Cross Reference Search. IXSH25N100 Equivalent

Type Designator: IXSH25N100

Type of IGBT channel: N-Channel

Maximum power dissipation (Pc) of IGBT transistor, W:

Maximum collector-emitter voltage |Uce|, V: 1000V

Collector-emitter saturation voltage |Ucesat|, V:

Maximum gate-emitter voltage |Ueg|, V:

Maximum collector current |Ic|, A: 50A

Maximum junction temperature (Tj), °C: 150

Rise time, nS: 0

Maximum collector capacity (Cc), pF:

Package: TO247

IXSH25N100 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXSH25N100 PDF doc:

2.1. ixsh25n120au1.pdf Size:36K _ixys

IXSH25N100
IXSH25N100

IXSH25N120AU1 IGBT with Diode IC25 = 50 A "S" Series - Improved SCSOA Capability VCES = 1200 V VCE(sat) = 4.0 V C G E Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25C to 150C 1200 V VCGR TJ = 25C to 150C; RGE = 1 MW 1200 V VGES Continuous 20 V VGEM Transient 30 V G E C IC25 TC = 25C 50 A IC90 TC = 90C 25 A ICM TC = 25C, 1 ms 80 A Features SSOA VGE = 15 V,

5.1. ixsh24n60_a.pdf Size:111K _ixys

IXSH25N100
IXSH25N100

Advance Technical Information VCES IC90 VCE(sat) HiPerFASTTM IGBT IXSH24N60 600V 24A 2.2V Short Circuit SOA Capability 600V 24A 2.7V IXSH24N60A TO-247 (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V G TAB C VCGR TJ = 25C to 150C, RGE = 1M? 600 V E VGES Continuous 20 V VGEM Transient 30 V G = Gate C = Collector IC25 TC = 25C 48 A E = Emitter TAB =

5.2. ixsh24n60u1_ixsh24n60au1.pdf Size:37K _ixys

IXSH25N100
IXSH25N100

HiPerFASTTM IGBT with Diode VCES IC25 VCE(sat) IXSH 24N60U1 600 V 48 A 2.2 V Short Circuit SOA Capability IXSH 24N60AU1 600 V 48 A 2.7 V Symbol Test Conditions Maximum Ratings TO-247 AD VCES TJ = 25C to 150C600 V VCGR TJ = 25C to 150C; RGE = 1 MW 600 V C (TAB) VGES Continuous 20 V G C VGEM Transient 30 V E G = Gate, C = Collector, IC25 TC = 25C48 A E = Emitter, TAB = Collecto

5.3. ixsh24n60b_ixsh24n60bd1_ixst24n60b_ixst24n60bd1.pdf Size:102K _ixys

IXSH25N100
IXSH25N100

IXSH 24N60B VCES = 600 V High Speed IGBT IXST 24N60B IC25 = 48 A IXSH 24N60BD1 VCE(sat) = 2.5 V Short Circuit SOA Capability IXST 24N60BD1 tfi typ = 170 ns (D1) TO-247 AD (IXSH) Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C 600 V (TAB) VCGR TJ = 25C to 150C; RGE = 1 M? 600 V G C VGES Continuous 20 V E VGEM Transient 30 V TO-268 (D3) ( IXST) IC25 TC = 25C48 A

5.4. ixsh20n60b2d1.pdf Size:592K _ixys

IXSH25N100
IXSH25N100

IXSH 20N60B2D1 VCES = 600 V High Speed IGBT IC25 = 35 A VCE(sat) = 2.5 V Short Circuit SOA Capability Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings TO-247 (IXSH) VCES TJ = 25C to 150C 600 V VCGR TJ = 25C to 150C; RGE = 1 M? 600 V VGES Continuous 20 V G VGEM Transient 30 V C E IC25 TC = 25C35 A G = Gate C = Collector IC110 TC = 110C20 A E = Emitter TA

See also transistors datasheet: IXSH15N120B , IXSH16N60U1 , IXSH20N60AU1 , IXSH20N60U1 , IXSH24N60 , IXSH24N60A , IXSH24N60AU1 , IXSH24N60U1 , FGH60N60SFD , IXSH25N100A , IXSH25N120A , IXSH25N120AU1 , IXSH30N60 , IXSH30N60A , IXSH30N60AU1 , IXSH30N60B , IXSH30N60BD1 .

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IGBT: BT15N60A9F | BT50N60ANF | BT30N60ANF | BT40N60BNF | BT15N120ANF | BT15T120ANF | BT25T120ANF | SSIG20N135H | SSIG15N135H | BRG25N120D |

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