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IXSN62N60U1 IGBT (IC) Datasheet. Cross Reference Search. IXSN62N60U1 Equivalent

Type Designator: IXSN62N60U1

Type of IGBT Channel: N-Channel

Maximum Power Dissipation (Pc), W:

Maximum Collector-Emitter Voltage |Vce|, V: 600V

Collector-Emitter saturation Voltage |Vcesat|, V:

Maximum Gate-Emitter Voltage |Veg|, V:

Maximum Collector Current |Ic|, A: 90A

Maximum Junction Temperature (Tj), °C: 150

Rise Time, nS: 0

Maximum Collector Capacity (Cc), pF:

Package: ISOTOP

IXSN62N60U1 Transistor Equivalent Substitute - IGBT Cross-Reference Search

IXSN62N60U1 PDF doc:

1.1. ixsn62n60u1.pdf Size:71K _igbt_a

IXSN62N60U1
IXSN62N60U1

IGBT with Diode IXSN 62N60U1 VCES = 600 V IC25 = 90 A VCE(sat) = 2.5 V Short Circuit SOA Capability 3 2 4 1 Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B 1 2 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 A VGES Continuous ±20 V 4 VGEM Transient ±30 V 3 IC25 TC = 25°C90 A 1 = Emitter , 3 = Collector IC90 TC = 90°C50 A 2 = Gate, 4

See also transistors datasheet: IXSM30N60A , IXSN35N100U1 , IXSN35N120AU1 , IXSN50N60BD2 , IXSN50N60BD3 , IXSN52N60AU1 , IXSN55N120A , IXSN55N120AU1 , SKA06N60 , IXSN80N60A , IXSN80N60AU1 , IXSP16N60 , IXST15N120B , IXST30N60B , IXST30N60BD1 , IXST30N60C , IXST30N60CD1 .

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IGBT: IXXH60N65C4 | IXXH60N65B4H1 | IXXH60N65B4 | IXXH40N65B4H1 | IXXH40N65B4 | IXXH30N65B4 | IXXH30N60C3 | IXXH30N60B3 | IXXH150N60C3 | IXXH110N65C4 |

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